发明申请
US20110006428A1 Liner Formation in 3DIC Structures 有权
3DIC结构中的衬板形成

Liner Formation in 3DIC Structures
摘要:
An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.
公开/授权文献
信息查询
0/0