发明申请
- 专利标题: TOMIC LAYER FILM FORMING APPARATUS
- 专利标题(中): TOMIC层薄膜成型装置
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申请号: US12933677申请日: 2009-03-18
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公开(公告)号: US20110017135A1公开(公告)日: 2011-01-27
- 发明人: Kazutoshi Murata
- 申请人: Kazutoshi Murata
- 优先权: JP2008-074544 20080321
- 国际申请: PCT/JP2009/055297 WO 20090318
- 主分类号: C23C16/52
- IPC分类号: C23C16/52 ; C23C16/00
摘要:
An atomic layer film forming apparatus includes a plurality of gas supply pipes (121-123) for supplying a source gas to a film forming chamber (101), and an exhaust portion (105) for evacuating the inside of the film forming chamber (101). Valves (131-133) are attached to the gas supply pipes (121-123), respectively. In the film forming chamber (101), film forming chamber monitors (141-149) are arranged to measure a state in the film forming chamber (101). Based on the results of measurement by the film forming chamber monitors (141-149), a controller (107) controls the openings or opening times of the valves (131-133). The atomic layer film forming apparatus can improve gas uniformity when a plurality of gas supply ports are used.
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