发明申请
US20110017135A1 TOMIC LAYER FILM FORMING APPARATUS 审中-公开
TOMIC层薄膜成型装置

  • 专利标题: TOMIC LAYER FILM FORMING APPARATUS
  • 专利标题(中): TOMIC层薄膜成型装置
  • 申请号: US12933677
    申请日: 2009-03-18
  • 公开(公告)号: US20110017135A1
    公开(公告)日: 2011-01-27
  • 发明人: Kazutoshi Murata
  • 申请人: Kazutoshi Murata
  • 优先权: JP2008-074544 20080321
  • 国际申请: PCT/JP2009/055297 WO 20090318
  • 主分类号: C23C16/52
  • IPC分类号: C23C16/52 C23C16/00
TOMIC LAYER FILM FORMING APPARATUS
摘要:
An atomic layer film forming apparatus includes a plurality of gas supply pipes (121-123) for supplying a source gas to a film forming chamber (101), and an exhaust portion (105) for evacuating the inside of the film forming chamber (101). Valves (131-133) are attached to the gas supply pipes (121-123), respectively. In the film forming chamber (101), film forming chamber monitors (141-149) are arranged to measure a state in the film forming chamber (101). Based on the results of measurement by the film forming chamber monitors (141-149), a controller (107) controls the openings or opening times of the valves (131-133). The atomic layer film forming apparatus can improve gas uniformity when a plurality of gas supply ports are used.
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