公开(公告)号：US20110293853A1

公开(公告)日：2011-12-01

申请号：US13147878

申请日：2010-01-28

申请人： Kazuki Takizawa ,  Yasunari Mori ,  Kazutoshi Murata

发明人： Kazuki Takizawa ,  Yasunari Mori ,  Kazutoshi Murata

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/45544 ,  C23C16/45536 ,  C23C16/45557 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449

摘要： A thin film forming apparatus controls pressures of a first internal space in a deposition vessel and a second internal space provided in the first internal space according to determined pressure conditions, respectively. The apparatus causes a source gas to flow onto a substrate in the second internal space and supplies a high-frequency power to a plasma source provided in the first internal space according to the pressure conditions, thereby generating plasma in the second internal space to form a thin film on the substrate.

摘要翻译： 薄膜形成装置分别根据确定的压力条件控制沉积容器中的第一内部空间的压力和设置在第一内部空间中的第二内部空间。 该装置使源气体流到第二内部空间中的基板上，并根据压力条件向设置在第一内部空间中的等离子体源提供高频电力，从而在第二内部空间中产生等离子体，形成 基材上的薄膜。

公开(公告)号：US07022545B2

公开(公告)日：2006-04-04

申请号：US10502537

申请日：2003-01-10

申请人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

发明人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

IPC分类号： H01L21/02 ,  H01L21/205 ,  B24C1/00 ,  C30B29/36

CPC分类号： C30B29/36 ,  C23C16/01 ,  C23C16/325 ,  C30B25/02 ,  C30B33/00 ,  Y10S438/931

摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.

摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×10 11原子/ cm 2或更小，以产生SiC监测晶片。

公开(公告)号：US06995036B2

公开(公告)日：2006-02-07

申请号：US10478649

申请日：2002-05-24

申请人： Shigehiro Nishino ,  Kazutoshi Murata ,  Yoshiharu Chinone

发明人： Shigehiro Nishino ,  Kazutoshi Murata ,  Yoshiharu Chinone

IPC分类号： H01L21/00

CPC分类号： C30B23/02 ,  C30B29/36 ,  Y10T117/10

摘要： The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a β-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the β-SiC substrate 19.

摘要翻译： 本发明的目的是使得可以以低成本制造具有稳定性和良好重现性的α-SiC晶片，而不使用昂贵且不太可用的晶种基底。 在每个坩埚11a，11b，11c等中，将β-SiC衬底19和SiC原料17彼此靠近放置。 这些坩埚堆叠成层，放置在辐射管40的内部。 辐射管40由感应加热线圈23加热，辐射辐射热，并均匀加热坩埚11a，11b，11c等。 在每个坩埚中的SiC原料在β-SiC衬底19的表面上升华并重结晶。

公开(公告)号：US20110303147A1

公开(公告)日：2011-12-15

申请号：US13203381

申请日：2010-02-15

申请人： Hiroyuki Tachibana ,  Kazutoshi Murata ,  Naomasa Miyatake ,  Yasunari Mori

发明人： Hiroyuki Tachibana ,  Kazutoshi Murata ,  Naomasa Miyatake ,  Yasunari Mori

IPC分类号： C23C16/44 ,  C23C16/455

CPC分类号： C23C16/4409 ,  C23C16/4407 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/54

摘要： An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.

摘要翻译： 一种用于在基板上形成薄膜的原子层沉积装置，包括限定第一内部空间的第一容器，设置在第一容器内部以限定第二内部空间的第二容器，第二容器为罐形， 在其一端的第一开口，在通过第一开口流到第二内部空间的基板上形成薄膜的源气体，以及包括气体供给口的加压构件，该气体供给口用于通过该第二内部空间供给源气体， 第一开口，所述按压部件构造成沿着所述第二容器的长度方向按压所述第二容器，使得所述第二内部空间与所述第一内部空间分离。

公开(公告)号：US20060097266A1

公开(公告)日：2006-05-11

申请号：US10520141

申请日：2003-06-30

申请人： Shigehiro Nishino ,  Kazutoshi Murata

发明人： Shigehiro Nishino ,  Kazutoshi Murata

IPC分类号： H01L31/0312

CPC分类号： C30B29/36 ,  C30B33/06 ,  H01L21/0445 ,  H01L29/0657 ,  H01L29/1608

摘要： From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the α-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter α-SiC single crystal wafer.

摘要翻译： 从经济地制造SiC半导体器件的观点出发，利用现有的Si器件制造线可以处理小直径的SiC晶片。 多晶SiC从小直径a-SiC单晶晶片的至少一个表面侧生长成与现有半导体制造线的处理装置相对应的外径尺寸，然后将多晶SiC开 将α-SiC单晶晶片的表面研磨以制造双结构的增加直径的SiC，其中多晶SiC围绕小直径α-SiC单晶晶片的外周生长。

公开(公告)号：US08440268B2

公开(公告)日：2013-05-14

申请号：US12294428

申请日：2007-03-28

申请人： Keisuki Washio ,  Kazutoshi Murata ,  Naomasa Miyatake ,  Hiroyuki Tachibana ,  Nozomu Hattori

发明人： Keisuki Washio ,  Kazutoshi Murata ,  Naomasa Miyatake ,  Hiroyuki Tachibana ,  Nozomu Hattori

IPC分类号： H05H1/24

CPC分类号： C23C16/402 ,  C23C16/45542 ,  C23C16/5096 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31612

摘要： Oxygen gas, for example, is introduced into a film forming chamber, and high-frequency power is supplied to a plurality of monopole antennas arranged above a silicon substrate (101) in the film forming chamber to generate a plasma of the introduced oxygen gas, thereby supplying atomic oxygen (123) onto the surface of an aminosilane molecular layer (102). This plasma generation is performed for about 1 sec. With this operation, the adsorption layer (102) adsorbed onto the surface of the silicon substrate (101) is oxidized, thereby forming a silicon oxide layer (112) corresponding to one atomic layer of silicon on the surface of the silicon substrate (101).

摘要翻译： 例如，将氧气引入成膜室，向成膜室内的硅基板（101）上方配置的多个单极天线供给高频电力，生成引入氧气的等离子体， 从而将原子氧（123）提供到氨基硅烷分子层（102）的表面上。 执行该等离子体生成约1秒。 通过该操作，吸附在硅衬底（101）的表面上的吸附层（102）被氧化，从而在硅衬底（101）的表面上形成对应于一个原子层硅的氧化硅层（112） 。

公开(公告)号：US20130104803A1

公开(公告)日：2013-05-02

申请号：US13582616

申请日：2011-02-21

申请人： Kazuki Takizawa ,  Naomasa Miyatake ,  Kazutoshi Murata

发明人： Kazuki Takizawa ,  Naomasa Miyatake ,  Kazutoshi Murata

IPC分类号： H01L31/20

CPC分类号： H01L31/202 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32541 ,  Y02E10/50 ,  Y02P70/521

摘要： The thin-film forming apparatus includes: a deposition vessel that includes a deposition space in which the thin film is formed on the substrate in a reduced-pressure state; a raw material gas introducing section configured to introduce a raw material gas for the thin-film into the deposition space of the deposition vessel; and a plasma electrode section configured to generate plasma using the raw material gas for the thin-film in the deposition space. The plasma electrode section is a plate member in which a current flows from one end surface to the other end surface, the plate member provided with, as a plasma generating electrode, an electrode plate including an outward portion and a return portion which allow the current to flow in parallel to each other by bending a direction of the current flowing through the plate member in mid-flow.

摘要翻译： 薄膜形成装置包括：沉积容器，其包括在减压状态下在基板上形成薄膜的沉积空间; 原料气体导入部，其将用于所述薄膜的原料气体引入所述沉积容器的所述沉积空间; 以及等离子体电极部，被配置为使用沉积空间中的薄膜的原料气体产生等离子体。 等离子体电极部是电流从一端面向另一端面流动的板状部件，作为等离子体产生电极设置有包括向外部分和返回部分的电极板的板部件，其允许电流 通过在中流动中弯曲流过板构件的电流的方向来彼此平行地流动。

公开(公告)号：US20110305836A1

公开(公告)日：2011-12-15

申请号：US13203400

申请日：2010-03-03

申请人： Kazutoshi Murata ,  Yasunari Mori

发明人： Kazutoshi Murata ,  Yasunari Mori

IPC分类号： C23C16/458

CPC分类号： C23C16/45544 ,  C23C14/56 ,  C23C14/562 ,  C23C14/568 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/46 ,  C23C16/50 ,  C23C16/54 ,  H01J37/32752

摘要： An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.

摘要翻译： 在基板上形成薄膜的原子层沉积装置包括：第一容器，其限定第一内部空间，并且包括基板搬入口和排出口;以及气体导入口，位于不同的位置，所述基板被承载 通过所述基板输入和输出端口进出的气体，所述气体通过所述气体引入口引入以在所述基板上形成所述薄膜;第二容器，设置在所述第一容器中，以限定与所述第二内部空间分离的第二内部空间; 所述第一内部空间，所述第二容器包括第一开口，沿预定方向移动所述第二容器的第一移动机构;以及控制器，其控制所述第一移动机构，使得所述第二容器移动到所述第一位置， 当输入和输出基板时，输入和输出端口和第一开口彼此相对定位，控制器控制 e第一移动机构，使得当在基板上形成薄膜时，第二容器移动到第二位置，在第二位置，气体导入口和第一开口彼此相对定位。

公开(公告)号：US20110008550A1

公开(公告)日：2011-01-13

申请号：US12863565

申请日：2009-01-22

申请人： Kazutoshi Murata ,  Keisuke Washio

发明人： Kazutoshi Murata ,  Keisuke Washio

IPC分类号： C23C16/509 ,  C23C16/00

CPC分类号： H01L21/0228 ,  C23C16/403 ,  C23C16/45536 ,  H01J37/321 ,  H01J37/3211 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/3141

摘要： An atomic layer growing apparatus includes a deposition container, a gas supply unit, and an exhaust unit. In the deposition container, an antenna array and a substrate stage are provided. The antenna array is formed by disposing a plurality of antenna elements in parallel, each of the antenna elements being configured by coating a rod-shaped antenna body with a dielectric material. The antenna array generates plasma using one of an oxidizing gas and a nitriding gas. The substrate is placed on the substrate stage. The gas supply unit alternately supplies the source gas and the oxidizing gas toward the substrate stage from a supply hole made in a sidewall of the deposition container when a film is formed on the substrate. The exhaust unit exhausts the source gas and one of the oxidizing gas and the nitriding gas, which are alternately supplied into the deposition container.

摘要翻译： 原子层生长装置包括沉积容器，气体供应单元和排气单元。 在沉积容器中，设置有天线阵列和基板台。 天线阵列通过平行地布置多个天线元件而形成，每个天线元件通过用介电材料涂覆棒状天线体而构成。 天线阵列使用氧化气体和氮化气体之一产生等离子体。 将衬底放置在衬底台上。 当在基板上形成膜时，气体供给单元将源气体和氧化气体从沉积容器的侧壁上形成的供给孔向基板台供给。 排气单元排出源气体和氧化气体和氮化气体之一，交替地供给到沉积容器中。

公开(公告)号：US07544249B2

公开(公告)日：2009-06-09

申请号：US10520141

申请日：2003-06-30

申请人： Shigehiro Nishino ,  Kazutoshi Murata

发明人： Shigehiro Nishino ,  Kazutoshi Murata

IPC分类号： C30B29/36

CPC分类号： C30B29/36 ,  C30B33/06 ,  H01L21/0445 ,  H01L29/0657 ,  H01L29/1608

摘要： From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the α-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter α-SiC single crystal wafer.

摘要翻译： 从经济地制造SiC半导体器件的观点出发，利用现有的Si器件制造线可以处理小直径的SiC晶片。 多晶SiC从小直径a-SiC单晶晶片的至少一个表面侧生长成与现有半导体制造线的处理装置相对应的外径尺寸，然后将多晶SiC开 将α-SiC单晶晶片的表面研磨以制造双结构的增加直径的SiC，其中多晶SiC围绕小直径α-SiC单晶晶片的外周生长。