Invention Application
- Patent Title: CIGS SOLAR CELL AND METHOD OF FABRICATING THE SAME
- Patent Title (中): CIGS太阳能电池及其制造方法
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Application No.: US12769756Application Date: 2010-04-29
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Publication No.: US20110017289A1Publication Date: 2011-01-27
- Inventor: Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
- Applicant: Rae-Man PARK , Chull Won Ju , Dae-Hyung Cho , Yong-Duck Chung , Sung-Bum Bae , Won Seok Han , Kyu-Seok Lee , Je Ha Kim
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2009-0067824 20090724; KR10-2009-0125467 20091216
- Main IPC: H01L31/032
- IPC: H01L31/032 ; H01L31/18

Abstract:
Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.
Information query
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