利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.011 秒)

    Test device for testing plurality of samples and operating method thereof
    1.
    发明授权
    Test device for testing plurality of samples and operating method thereof 有权

    公开(公告)号：US09977071B2

    公开(公告)日：2018-05-22

    申请号：US14302354

    申请日：2014-06-11

    申请人： Jong Min Lee ,  Chull Won Ju ,  Byoung Gue Min

    发明人： Jong Min Lee ,  Chull Won Ju ,  Byoung Gue Min

    IPC分类号： G01R31/26

    CPC分类号： G01R31/2621 ,  G01R31/2608

    摘要： A test device includes: a testing unit connected with a measurement line, and configured to apply bias to the measurement line and measure the measurement line; a plurality of switching units configured to electrically connect the measurement line and the plurality of samples; and a control unit configured to sequentially turn on the plurality of switching units to sequentially apply the bias to the plurality of samples. The control unit determines whether a corresponding device sample has a defect based on a first measurement value according to measurement by the testing unit when the bias is applied to each of the plurality of samples.

    Radio frequency device comprising a vibratile carbon nanotube and a vibratile tuning electrode
    2.
    发明授权
    Radio frequency device comprising a vibratile carbon nanotube and a vibratile tuning electrode 有权
    包括振动性碳纳米管和振动调谐电极的射频装置

    公开(公告)号：US08022791B2

    公开(公告)日：2011-09-20

    申请号：US12495579

    申请日：2009-06-30

    申请人： Chull Won Ju ,  Jonghyurk Park ,  Yong Il Jun ,  Hee-Bum Jung

    发明人： Chull Won Ju ,  Jonghyurk Park ,  Yong Il Jun ,  Hee-Bum Jung

    IPC分类号： H03H9/24 ,  H03H9/46 ,  H04B1/16

    CPC分类号： H03H9/02417 ,  Y10S977/732 ,  Y10S977/742 ,  Y10S977/932 ,  Y10S977/949

    摘要： An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f0), a negative electrode fixed to a first end of the carbon nanotube, a vibratile tuning electrode having a variable resonance frequency and facing a second end of the carbon nanotube, and a positive electrode electrically connected to a first end of the tuning electrode. A second end of the tuning electrode is adjacent to the second end of the carbon nanotube, and the carbon nanotube vibrates at a carrier frequency according to an external electromagnetic wave having the carrier frequency, and the tuning electrode having variable resonance frequency characteristics amplifies distance variation between the second end of the carbon nanotube and the second end of the tuning electrode to increase an electron emission sensitivity according to field emission.

    摘要翻译： 提供RF设备。 RF装置包括具有纳米管固有频率（f0）的振动性碳纳米管，固定在碳纳米管的第一端的负极，具有可变谐振频率且面向碳纳米管的第二端的振动调谐电极，以及 电极连接到调谐电极的第一端的正电极。 调谐电极的第二端与碳纳米管的第二端相邻，并且碳纳米管根据具有载波频率的外部电磁波以载波频率振动，并且具有可变谐振频率特性的调谐电极放大距离变化 在碳纳米管的第二端和调谐电极的第二端之间，以根据场发射增加电子发射灵敏度。

    POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    4.
    发明申请
    POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 失效
    功率半导体器件及其制造方法

    公开(公告)号：US20130069173A1

    公开(公告)日：2013-03-21

    申请号：US13592560

    申请日：2012-08-23

    申请人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

    发明人： Woo Jin CHANG ,  Jong Won LIM ,  Ho Kyun AHN ,  Sang Choon KO ,  Sung Bum BAE ,  Chull Won JU ,  Young Rak PARK ,  Jae Kyoung MUN ,  Eun Soo NAM

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

    摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode;and a metal configured to connect the field plate and the source electrode.

    摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

    METHOD OF FORMING SENSOR FOR DETECTING GASES AND BIOCHEMICAL MATERIALS, INTEGRATED CIRCUIT HAVING THE SENSOR, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT
    5.
    发明申请
    METHOD OF FORMING SENSOR FOR DETECTING GASES AND BIOCHEMICAL MATERIALS, INTEGRATED CIRCUIT HAVING THE SENSOR, AND METHOD OF MANUFACTURING THE INTEGRATED CIRCUIT 审中-公开
    形成用于检测气体和生物材料的传感器的方法，具有传感器的集成电路以及制造集成电路的方法

    公开(公告)号：US20080121946A1

    公开(公告)日：2008-05-29

    申请号：US11736658

    申请日：2007-04-18

    申请人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

    发明人： Doo Hyeb YOUN ,  Sunglyul MAENG ,  Sang Hyeob KIM ,  Jonghyurk PARK ,  Kwang Yong KANG ,  Sang Hoon LEE ,  Chull Won JU

    IPC分类号： H01L29/78 ,  H01L21/00

    CPC分类号： G01N27/122 ,  G01N27/127

    摘要： A method of forming a sensor for detecting gases and biochemical materials that can be fabricated at a temperature in a range from room temperature to 400° C., a metal oxide semiconductor field effect transistor (MOSFET)-based integrated circuit including the sensor, and a method of manufacturing the integrated circuit are provided. The integrated circuit includes a semiconductor substrate. The sensor for detecting gases and biochemical materials includes a pair of electrodes formed on a first region of the semiconductor substrate, and a metal oxide nano structure layer formed on surfaces of the pair electrodes. A heater is formed to perform thermal treatment to re-use the material detected in the metal oxide nano structure layer. Also, a signal processor is formed by a MOSFET to process a predetermined signal obtained from a quantity change of a current flowing through the pair of electrodes of the sensor. To form the sensor, the metal oxide nano structure layer is formed on surfaces of the pair of electrodes at a temperature in a range from room temperature to 400° C.

    摘要翻译： 一种形成用于检测可在室温至400℃的温度范围内制造的气体和生物化学材料的传感器的方法，基于金属氧化物半导体场效应晶体管（MOSFET）的集成电路，包括该传感器，以及 提供了一种制造集成电路的方法。 集成电路包括半导体衬底。 用于检测气体和生化材料的传感器包括形成在半导体衬底的第一区域上的一对电极和形成在该对电极的表面上的金属氧化物纳米结构层。 形成加热器以进行热处理以重新使用在金属氧化物纳米结构层中检测的材料。 此外，信号处理器由MOSFET形成以处理从流过传感器的一对电极的电流的量变化获得的预定信号。 为了形成传感器，金属氧化物纳米结构层在室温至400℃的温度范围内形成在该对电极的表面上。

    Power semiconductor device and fabrication method thereof
    9.
    发明授权
    Power semiconductor device and fabrication method thereof 失效
    功率半导体器件及其制造方法

    公开(公告)号：US08772833B2

    公开(公告)日：2014-07-08

    申请号：US13592560

    申请日：2012-08-23

    申请人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

    发明人： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

    IPC分类号： H01L29/15

    CPC分类号： H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

    摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

    摘要翻译： 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

    FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
    10.
    发明申请
    FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
    场效应晶体管及其制造方法

    公开(公告)号：US20130069127A1

    公开(公告)日：2013-03-21

    申请号：US13556377

    申请日：2012-07-24

    申请人： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

    发明人： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

    IPC分类号： H01L29/78 ,  H01L21/20

    CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/8128

    摘要： A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

    摘要翻译： 根据本公开的示例性实施例的制造场效应晶体管的方法包括：在衬底上形成有源层，覆盖层，欧姆金属层和绝缘层; 在所述绝缘层上形成多层光致抗蚀剂; 图案化多层光致抗蚀剂以形成包括用于栅电极的第一开口和场电极的第二开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，使得第一开口中的绝缘层被更深地蚀刻并且盖层通过第一开口暴露; 通过蚀刻绝缘层通过第一开口蚀刻暴露的盖层，以形成栅极凹陷区域; 以及在所述栅极凹部区域和所述蚀刻绝缘层上沉积金属以形成栅极电极层。