发明申请
- 专利标题： SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体晶体管，半导体器件及制造半导体器件的方法
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申请号： US12934233申请日： 2009-03-26
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公开(公告)号： US20110018033A1公开(公告)日： 2011-01-27
- 发明人: Mitsuru Takenaka , Shinichi Takagi , Masahiko Hata , Osamu Ichikawa
- 申请人： Mitsuru Takenaka , Shinichi Takagi , Masahiko Hata , Osamu Ichikawa
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： SUMITOMO CHEMICAL COMPANY, LIMITED,THE UNIVERSITY OF TOKYO
- 当前专利权人： SUMITOMO CHEMICAL COMPANY, LIMITED,THE UNIVERSITY OF TOKYO
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2008082081 20080326
- 国际申请： PCT/JP2009/001375 WO 20090326
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L21/283 ; H01L29/78 ; H01L21/3205
摘要：
It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method.Provided is a semiconductor wafer comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; and a second semiconductor layer that is formed to contact the first semiconductor layer, is a group 3-5 compound semiconductor layer that lattice matches or pseudo-lattice matches with InP, and can be selectively oxidized relative to the first semiconductor layer. Also provided is a semiconductor device comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; an oxide layer formed by selectively oxidizing, relative to the first semiconductor layer, at least a portion of a second semiconductor layer that is a group 3-5 compound formed to contact the first semiconductor layer and that lattice matches or pseudo-lattice matches with InP; and a control electrode that adds an electric field to a channel formed in the first semiconductor layer.
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