公开(公告)号：US20110233689A1

公开(公告)日：2011-09-29

申请号：US13133092

申请日：2009-11-27

申请人： Masahiko Hata ,  Noboru Fukuhara ,  Hisashi Yamada ,  Shinichi Takagi ,  Masakazu Sugiyama ,  Mitsuru Takenaka ,  Tetsuji Yasuda ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii ,  Akihiro Ohtake ,  Jun Nara

发明人： Masahiko Hata ,  Noboru Fukuhara ,  Hisashi Yamada ,  Shinichi Takagi ,  Masakazu Sugiyama ,  Mitsuru Takenaka ,  Tetsuji Yasuda ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii ,  Akihiro Ohtake ,  Jun Nara

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L21/336 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L29/045 ,  H01L29/20 ,  H01L29/7833 ,  H01L29/78681

摘要： There is provided a semiconductor device that includes a III-V Group compound semiconductor having a zinc-blende-type crystal structure, an insulating material being in contact with the (111) plane of the III-V Group compound semiconductor, a plane of the III-V Group compound semiconductor equivalent to the (111) plane, or a plane that has an off angle with respect to the (111) plane or the plane equivalent to the (111) plane, and an MIS-type electrode being in contact with the insulating material and including a metal conductive material.

摘要翻译： 提供了一种半导体器件，其包括具有锌闪光体型晶体结构的III-V族化合物半导体，与III-V族化合物半导体的（111）面接触的绝缘材料， 相当于（111）面的III-V族化合物半导体，或相对于（111）面或与（111）面相当的面的偏角的平面，和与MIS接触的MIS型电极 具有绝缘材料并且包括金属导电材料。

公开(公告)号：US08779471B2

公开(公告)日：2014-07-15

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko Hata ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko Hata ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0

公开(公告)号：US20120205747A1

公开(公告)日：2012-08-16

申请号：US13410872

申请日：2012-03-02

申请人： Hisashi YAMADA ,  Masahiko HATA ,  Masafumi YOKOYAMA ,  Mitsuru TAKENAKA ,  Shinichi TAKAGI ,  Tetsuji YASUDA ,  Hideki TAKAGI ,  Yuji URABE

发明人： Hisashi YAMADA ,  Masahiko HATA ,  Masafumi YOKOYAMA ,  Mitsuru TAKENAKA ,  Shinichi TAKAGI ,  Tetsuji YASUDA ,  Hideki TAKAGI ,  Yuji URABE

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L21/20 ,  H01L29/02

CPC分类号： H01L29/78681 ,  H01L21/76251 ,  H01L21/76256 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66742

摘要： A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

摘要翻译： 半导体衬底包括衬底，绝缘层和半导体层。 绝缘层在衬底上并与衬底接触。 绝缘层包括无定形金属氧化物和无定形金属氮化物中的至少一种。 半导体层在绝缘层上方并与之接触。 半导体层通过晶体生长形成。

公开(公告)号：US07292746B2

公开(公告)日：2007-11-06

申请号：US10799786

申请日：2004-03-12

申请人： Yoshiaki Nakano ,  Mitsuru Takenaka

发明人： Yoshiaki Nakano ,  Mitsuru Takenaka

IPC分类号： G02B6/26

CPC分类号： G02F3/026 ,  G02F1/0126 ,  G02F3/00 ,  G02F2001/217 ,  G02F2201/05

摘要： The present invention provides a set-reset flip-flop operating in an all-optical manner. In this invention, a set pulse is inputted from the setting port. In doing so, only oscillation in set mode is generated at the multi-mode interference portion in a waveguide. As a result, a non-inverting output Q is obtained from the non-inverting output port. This state is then continued even if the set pulse input goes off. Next, a reset pulse is inputted to the resetting port. In doing so, at the multi-mode interference portion, oscillation of light in the set mode is halted, and oscillation in the reset mode occurs. As a result, it is possible to obtain an inverting output Q-bar from the inverting output port. This state is then continued even if the reset pulse goes off.

摘要翻译： 本发明提供一种以全光学方式工作的设定复位触发器。 在本发明中，从设定口输入设定脉冲。 在这样做时，在波导管的多模干涉部分仅产生设定模式的振荡。 结果，从非反相输出端口获得非反相输出端Q。 即使设置的脉冲输入关闭，该状态仍然继续。 接下来，将复位脉冲输入到复位端口。 这样做时，在多模干涉部分中，停止设定模式的光的振荡，并且发生复位模式的振荡。 结果，可以从反相输出端口获得反相输出Q-bar。 即使复位脉冲关闭，该状态仍然继续。

公开(公告)号：US06208795B1

公开(公告)日：2001-03-27

申请号：US09527022

申请日：2000-03-16

申请人： Yoshiaki Nakano ,  Mitsuru Takenaka

发明人： Yoshiaki Nakano ,  Mitsuru Takenaka

IPC分类号： G02B610

CPC分类号： H01S5/50 ,  G02F1/0955 ,  H01S5/0064 ,  H01S5/026

摘要： An optical waveguide isolator for use in an optical communication system is disclosed. The optical waveguide isolator comprises a semiconductive light amplifier structure including a semiconductor substrate of first conductivity type having a surface of a layer to be formed thereon, a first cladding layer of first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of the second conductivity type opposite to first conductivity type, formed on active layer, a first electrode formed on the surface of the semiconductor substrate opposite to the surface to be formed as a layer, and a second electrode formed on the second cladding layer; the first and the second cladding layers and the active layer form an optical waveguide in which the light wave propagates. The semiconductive light amplifier structure further comprises a light absorptive magnetic material layer having light absorption function for the light wave propagating through the optical waveguide. The magnetic material layer is magnetized so as to have the magnetic-field component in the direction which corresponds to the direction where a magnetic vector of the light wave vibrates, the waveguide structure body has a nonreciprocity optical characteristic that effective refractive index changes into the light wave to which the optical waveguide is propagated according to the magnet-optical effect of the light absorptive magnetic material layer according to the direction of propagation, by the effective refractive index change in the nonreciprocity, the attenuation of the first light wave that the optical waveguide is propagated in the first direction caused when the said waveguide is propagated, becomes small more than the attenuation of the second light wave propagated in the second direction opposite to the first direction caused when the said waveguide is propagated.

摘要翻译： 公开了一种用于光通信系统的光波导隔离器。 光波导隔离器包括半导体光放大器结构，其包括具有要形成在其上的层的表面的第一导电类型的半导体衬底，形成在衬底上的第一导电类型的第一覆盖层，形成在第一覆层上的有源层 在有源层上形成与第一导电类型相反的第二导电类型的第二包层，形成在与形成为一层的表面相对的半导体衬底的表面上的第一电极和形成在第一电极上的第二电极， 第二包层; 第一和第二包层和有源层形成光波传播的光波导。 半导体光放大器结构还包括对于通过光波导传播的光波具有光吸收功能的光吸收磁性材料层。 磁性材料层被磁化，使其具有与光波的磁矢量的振动方向相对应的方向的磁场分量，波导结构体具有有效折射率变化为光的不可逆光学特性 波导根据传播方向根据光吸收磁性材料层的磁光效应，通过非互易性中的有效折射率变化，第一光波的衰减而传播光波导 在所述波导传播时引起的第一方向传播，比在所述波导传播时引起的与第一方向相反的第二方向传播的第二光波的衰减变得小。

公开(公告)号：US20110018033A1

公开(公告)日：2011-01-27

申请号：US12934233

申请日：2009-03-26

申请人： Mitsuru Takenaka ,  Shinichi Takagi ,  Masahiko Hata ,  Osamu Ichikawa

发明人： Mitsuru Takenaka ,  Shinichi Takagi ,  Masahiko Hata ,  Osamu Ichikawa

IPC分类号： H01L29/205 ,  H01L21/283 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/7787 ,  H01L21/28264 ,  H01L29/205 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/78648 ,  H01L29/78681

摘要： It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method.Provided is a semiconductor wafer comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; and a second semiconductor layer that is formed to contact the first semiconductor layer, is a group 3-5 compound semiconductor layer that lattice matches or pseudo-lattice matches with InP, and can be selectively oxidized relative to the first semiconductor layer. Also provided is a semiconductor device comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; an oxide layer formed by selectively oxidizing, relative to the first semiconductor layer, at least a portion of a second semiconductor layer that is a group 3-5 compound formed to contact the first semiconductor layer and that lattice matches or pseudo-lattice matches with InP; and a control electrode that adds an electric field to a channel formed in the first semiconductor layer.

摘要翻译： 本发明的目的是使用实用和简单的方法在氧化物层和3-5族化合物半导体之间形成良好的界面。 提供了包括第一半导体层的半导体晶片，其是不含砷的组3-5化合物，并且晶格匹配或伪晶格与InP匹配; 和形成为与第一半导体层接触的第二半导体层是与InP晶格匹配或伪晶格匹配的组3-5化合物半导体层，并且可相对于第一半导体层选择性地氧化。 还提供了一种半导体器件，其包括第一半导体层，其是不含砷的组3-5化合物，并且晶格匹配或伪晶格与InP匹配; 通过相对于第一半导体层选择性地氧化形成为与第一半导体层接触的组3-5化合物的第二半导体层的至少一部分，并且晶格匹配或伪晶格匹配的InP形成的氧化物层 ; 以及将电场与形成在第一半导体层中的沟道相加的控制电极。

公开(公告)号：US09112035B2

公开(公告)日：2015-08-18

申请号：US13410872

申请日：2012-03-02

申请人： Hisashi Yamada ,  Masahiko Hata ,  Masafumi Yokoyama ,  Mitsuru Takenaka ,  Shinichi Takagi ,  Tetsuji Yasuda ,  Hideki Takagi ,  Yuji Urabe

发明人： Hisashi Yamada ,  Masahiko Hata ,  Masafumi Yokoyama ,  Mitsuru Takenaka ,  Shinichi Takagi ,  Tetsuji Yasuda ,  Hideki Takagi ,  Yuji Urabe

IPC分类号： H01L29/02 ,  H01L29/786 ,  H01L21/762 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L29/78681 ,  H01L21/76251 ,  H01L21/76256 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66742

摘要： A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

摘要翻译： 半导体衬底包括衬底，绝缘层和半导体层。 绝缘层在衬底上并与衬底接触。 绝缘层包括无定形金属氧化物和无定形金属氮化物中的至少一种。 半导体层在绝缘层上方并与之接触。 半导体层通过晶体生长形成。

公开(公告)号：US08431459B2

公开(公告)日：2013-04-30

申请号：US12934233

申请日：2009-03-26

申请人： Mitsuru Takenaka ,  Shinichi Takagi ,  Masahiko Hata ,  Osamu Ichikawa

发明人： Mitsuru Takenaka ,  Shinichi Takagi ,  Masahiko Hata ,  Osamu Ichikawa

IPC分类号： H01L21/00

CPC分类号： H01L29/7787 ,  H01L21/28264 ,  H01L29/205 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/78648 ,  H01L29/78681

摘要： It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method.Provided is a semiconductor wafer comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; and a second semiconductor layer that is formed to contact the first semiconductor layer, is a group 3-5 compound semiconductor layer that lattice matches or pseudo-lattice matches with InP, and can be selectively oxidized relative to the first semiconductor layer. Also provided is a semiconductor device comprising a first semiconductor layer that is a group 3-5 compound not containing arsenic and that lattice matches or pseudo-lattice matches with InP; an oxide layer formed by selectively oxidizing, relative to the first semiconductor layer, at least a portion of a second semiconductor layer that is a group 3-5 compound formed to contact the first semiconductor layer and that lattice matches or pseudo-lattice matches with InP; and a control electrode that adds an electric field to a channel formed in the first semiconductor layer.

摘要翻译： 本发明的目的是使用实用和简单的方法在氧化物层和3-5族化合物半导体之间形成良好的界面。 提供了包括第一半导体层的半导体晶片，其是不含砷的组3-5化合物，并且晶格匹配或伪晶格与InP匹配; 和形成为与第一半导体层接触的第二半导体层是与InP晶格匹配或伪晶格匹配的组3-5化合物半导体层，并且可相对于第一半导体层选择性地氧化。 还提供了一种半导体器件，其包括第一半导体层，其是不含砷的组3-5化合物，并且晶格匹配或伪晶格与InP匹配; 通过相对于第一半导体层选择性地氧化形成为与第一半导体层接触的组3-5化合物的第二半导体层的至少一部分，并且晶格匹配或伪晶格匹配的InP形成的氧化物层 ; 以及将电场与形成在第一半导体层中的沟道相加的控制电极。

公开(公告)号：US20120228673A1

公开(公告)日：2012-09-13

申请号：US13413216

申请日：2012-03-06

申请人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

发明人： Masahiko HATA ,  Hisashi Yamada ,  Noboru Fukuhara ,  Shinichi Takagi ,  Mitsuru Takenaka ,  Masafumi Yokoyama ,  Tetsuji Yasuda ,  Yuji Urabe ,  Noriyuki Miyata ,  Taro Itatani ,  Hiroyuki Ishii

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/7786 ,  H01L21/26553 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66318 ,  H01L29/66522

摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0

摘要翻译： 提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。 这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成 的In x Ga 1-x As y 1 P 1-y 1（0