Invention Application
- Patent Title: METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE
- Patent Title (中): 使用金属绝缘体过渡器件控制晶体管辐射热的方法和电路
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Application No.: US12742430Application Date: 2008-11-11
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Publication No.: US20110018607A1Publication Date: 2011-01-27
- Inventor: Hyun Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-jin Yun
- Applicant: Hyun Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-jin Yun
- Applicant Address: KR Daejeon-city
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon-city
- Priority: KR1020070114962 20071112; KR1020080042489 20080507; KR1020080052257 20080603
- International Application: PCT/KR2008/006630 WO 20081111
- Main IPC: H03K17/60
- IPC: H03K17/60

Abstract:
Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.
Public/Granted literature
- US08563903B2 Method and circuit for controlling radiant heat of transistor using metal-insulator transition device Public/Granted day:2013-10-22
Information query
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