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    OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT
    1.
    发明申请
    OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT 失效
    振荡电路包括麻省电器和调节振荡电路的振荡频率的方法

    公开(公告)号：US20100085126A1

    公开(公告)日：2010-04-08

    申请号：US12531058

    申请日：2008-03-05

    申请人： Yong-Wook Lee ,  Bong-Jun Kim ,  Hyun-Tak Kim ,  Sung-Youl Choi ,  Byung-Gyu Chae ,  Jung-Wook Lim ,  Sun-Jin Yun

    发明人： Yong-Wook Lee ,  Bong-Jun Kim ,  Hyun-Tak Kim ,  Sung-Youl Choi ,  Byung-Gyu Chae ,  Jung-Wook Lim ,  Sun-Jin Yun

    IPC分类号： H03B1/00

    CPC分类号： H01L49/003 ,  H03B9/12

    摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.

    摘要翻译： 提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生 电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压 或电流到MIT设备。 根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

    Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same
    3.
    发明授权
    Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same 有权
    三端子金属绝缘体转换开关，包括相同的开关系统及其控制金属 - 绝缘体转换的方法

    公开(公告)号：US08536554B2

    公开(公告)日：2013-09-17

    申请号：US12599248

    申请日：2008-05-07

    申请人： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sung-Youl Choi ,  Sun-Jin Yun

    发明人： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sung-Youl Choi ,  Sun-Jin Yun

    IPC分类号： H01L21/02

    CPC分类号： H01L49/003

    摘要： Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

    摘要翻译： 提供了一种三端MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要传统的栅极绝缘层，包括3端子MIT开关的开关系统以及控制三端MIT的MIT的方法 开关。 3端MIT开关包括2端MIT装置，其分别连接到2端MIT装置的每个端子，产生过渡电压的不连续MIT，入口电极和出口电极以及控制电极 ，其连接到入口电极并且包括与入口电极的外部端子分离的外部端子，其中根据施加到控制电极的电压或电流来控制2端子MIT装置的MIT。 开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

    CIRCUIT FOR CONTINUOUSLY MEASURING DISCONTINUOUS METAL INSULATOR TRANSITION OF MIT ELEMENT AND MIT SENSOR USING THE SAME
    4.
    发明申请
    CIRCUIT FOR CONTINUOUSLY MEASURING DISCONTINUOUS METAL INSULATOR TRANSITION OF MIT ELEMENT AND MIT SENSOR USING THE SAME 有权
    用于连续测量不连续金属绝缘子过渡的电路元件和麻省传感器的电路

    公开(公告)号：US20100182034A1

    公开(公告)日：2010-07-22

    申请号：US12376668

    申请日：2007-07-05

    申请人： Hyun-Tak Kim ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Sang-Kuk Choi

    发明人： Hyun-Tak Kim ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Sang-Kuk Choi

    IPC分类号： G01R31/26

    CPC分类号： G01R31/2641

    摘要： Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.

    摘要翻译： 提供了一种用于连续测量使用该电路的MIT元件和MIT传感器的不连续金属 - 绝缘体转变（MIT）的电路。 该电路包括被测量对象单元，其包括具有在其转变电压下出现的不连续MIT的MIT元件，向待测量对象单元施加预定脉冲电流或电压信号的电源单元， 测量MIT元件的不连续MIT的单元，以及控制电源单元和测量单元的微处理器。 不连续的MIT测量电路连续测量MIT元件的不连续MIT，因此它可以用作感测外部因素变化的传感器。

    Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit
    5.
    发明授权
    Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit 失效
    包括MIT装置的振荡电路和调整振荡电路的振荡频率的方法

    公开(公告)号：US08031022B2

    公开(公告)日：2011-10-04

    申请号：US12531058

    申请日：2008-03-05

    申请人： Yong-Wook Lee ,  Bong-Jun Kim ,  Hyun-Tak Kim ,  Sung-Youl Choi ,  Byung-Gyu Chae ,  Jung-Wook Lim ,  Sun-Jin Yun

    发明人： Yong-Wook Lee ,  Bong-Jun Kim ,  Hyun-Tak Kim ,  Sung-Youl Choi ,  Byung-Gyu Chae ,  Jung-Wook Lim ,  Sun-Jin Yun

    IPC分类号： H03B11/00

    CPC分类号： H01L49/003 ,  H03B9/12

    摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.

    摘要翻译： 提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生 电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压 或电流到MIT设备。 根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

    METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE
    6.
    发明申请
    METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE 有权
    使用金属绝缘体过渡器件控制晶体管辐射热的方法和电路

    公开(公告)号：US20110018607A1

    公开(公告)日：2011-01-27

    申请号：US12742430

    申请日：2008-11-11

    申请人： Hyun Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sun-jin Yun

    发明人： Hyun Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sun-jin Yun

    IPC分类号： H03K17/60

    CPC分类号： H01L25/16 ,  H01L23/62 ,  H01L2924/0002 ,  H02H3/085 ,  H02H5/047 ,  H01L2924/00

    摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

    摘要翻译： 提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来阻止功率晶体管的发热来保护，并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围 电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热 晶体管。

    ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS
    9.
    发明申请
    ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS 有权
    具有平行导电层的金属绝缘体过渡装置

    公开(公告)号：US20090057820A1

    公开(公告)日：2009-03-05

    申请号：US12162964

    申请日：2007-01-31

    申请人： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

    发明人： Hyun-Tak Kim ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun

    IPC分类号： H01L23/525

    CPC分类号： H01L49/003

    摘要： An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.

    摘要翻译： 提供了具有平行导电层的突发MIT（金属 - 绝缘体转变）器件。 突变MIT装置包括设置在基板的特定区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及将第一电极与第二电极电连接的至少一个导电层 并且具有允许导电层的整个区域由于MIT而转变成金属层的宽度。 由于这种构造，通常由电流流过导电层引起的导电层的劣化不太可能发生。

    Method and circuit for controlling radiant heat of transistor using metal-insulator transition device
    10.
    发明授权
    Method and circuit for controlling radiant heat of transistor using metal-insulator transition device 有权
    使用金属 - 绝缘体转换装置控制晶体管辐射热的方法和电路

    公开(公告)号：US08563903B2

    公开(公告)日：2013-10-22

    申请号：US12742430

    申请日：2008-11-11

    申请人： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sun-Jin Yun

    发明人： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sun-Jin Yun

    IPC分类号： H05B1/02

    CPC分类号： H01L25/16 ,  H01L23/62 ,  H01L2924/0002 ,  H02H3/085 ,  H02H5/047 ,  H01L2924/00

    摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.

    摘要翻译： 提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来阻止功率晶体管的发热来保护，并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围 电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热 晶体管。