发明申请
- 专利标题： METHOD OF MEASURING PATTERN SHAPE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS CONTROL SYSTEM
- 专利标题（中）： 测量图形的方法，制造半导体器件的方法和工艺控制系统
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申请号： US12823024申请日： 2010-06-24
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公开(公告)号： US20110020956A1公开(公告)日： 2011-01-27
- 发明人: Kana NEMOTO , Shunichi Matsumoto , Yasuhiro Yoshitake
- 申请人： Kana NEMOTO , Shunichi Matsumoto , Yasuhiro Yoshitake
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 优先权： JP2009-171111 20090722
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; G01B11/24
摘要：
A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.
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