公开(公告)号：US20110020956A1

公开(公告)日：2011-01-27

申请号：US12823024

申请日：2010-06-24

申请人： Kana NEMOTO ,  Shunichi Matsumoto ,  Yasuhiro Yoshitake

发明人： Kana NEMOTO ,  Shunichi Matsumoto ,  Yasuhiro Yoshitake

IPC分类号： H01L21/66 ,  G01B11/24

CPC分类号： G01B11/24 ,  G01B2210/56 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.

摘要翻译： 提供了即使当相对于半导体器件的小型化而处理裕度窄时，也可以高精度地测量执行半导体图案的形状测量的图案形状的方法。 在测定图案形状的方法中，当不能选择最佳匹配的计算波形时，基于使用独立于图案的测量方法的另一测量装置获得的信息，将形状参数中的至少一个参数设置为固定值 形状测量，再次执行库和检测波形的匹配，选择最佳匹配计算波形，并根据最佳匹配计算波形获得目标图形的形状信息。