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1.发明申请METHOD OF MEASURING PATTERN SHAPE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS CONTROL SYSTEM 有权测量图形的方法，制造半导体器件的方法和工艺控制系统公开(公告)号：US20110020956A1
公开(公告)日：2011-01-27
申请号：US12823024
申请日：2010-06-24
CPC分类号： G01B11/24 , G01B2210/56 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.
摘要翻译： 提供了即使当相对于半导体器件的小型化而处理裕度窄时，也可以高精度地测量执行半导体图案的形状测量的图案形状的方法。 在测定图案形状的方法中，当不能选择最佳匹配的计算波形时，基于使用独立于图案的测量方法的另一测量装置获得的信息，将形状参数中的至少一个参数设置为固定值 形状测量，再次执行库和检测波形的匹配，选择最佳匹配计算波形，并根据最佳匹配计算波形获得目标图形的形状信息。
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2.发明授权Method of measuring pattern shape, method of manufacturing semiconductor device, and process control system 有权测量图案形状的方法，制造半导体器件的方法以及过程控制系统公开(公告)号：US08227265B2
公开(公告)日：2012-07-24
申请号：US12823024
申请日：2010-06-24
IPC分类号： H01L21/66
CPC分类号： G01B11/24 , G01B2210/56 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.
摘要翻译： 提供了即使当相对于半导体器件的小型化而处理裕度窄时，也可以高精度地测量执行半导体图案的形状测量的图案形状的方法。 在测定图案形状的方法中，当不能选择最佳匹配计算波形时，基于使用独立于图案的测量方法的另一测量装置获得的信息，将形状参数中的至少一个参数设置为固定值 形状测量，再次执行库和检测波形的匹配，选择最佳匹配计算波形，并根据最佳匹配计算波形获得目标图形的形状信息。
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公开(公告)号：US06841321B2
公开(公告)日：2005-01-11
申请号：US10052513
申请日：2002-01-23
IPC分类号： G03F7/20 , H01L21/027 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70525 , G03F7/70458 , G03F7/70533 , G03F7/70591 , G03F7/70633
摘要： A method and a system for processing a semiconductor device intended to improve the overlay accuracy of a semiconductor device product, particularly in its device area, in carrying out the mix-and-match exposure process are designed to calculate the difference of exposure distortions between two layers in the device area and the difference of exposure distortions between the two layers at the overlay measurement mark position from data of exposure field distortions of two exposure tools used for the mix-and-match exposure process and data of device area and overlay measurement mark position of the product, calculate a modification value which relates both differences to each other, calculate a first exposure condition correction value from the measurement result of overlay, and carry out the exposure process based on a second exposure condition correction value which is evaluated by modifying the first exposure condition correction value with the modification value.
摘要翻译： 设计了一种用于处理半导体器件的方法和系统，旨在提高半导体器件产品的覆盖精度，特别是在其器件区域中进行混合匹配曝光过程，以计算两者之间的曝光失真的差异 设备区域中的层和来自覆盖测量标记位置处的两层之间的曝光失真的差异与用于混合和匹配曝光处理的两个曝光工具的曝光场失真数据以及设备区域和覆盖测量标记的数据 计算产品的位置，计算相互之间的差异的修正值，根据覆盖的测量结果计算第一曝光条件校正值，并且基于通过修改来评估的第二曝光条件校正值来执行曝光处理 具有修改值的第一曝光条件校正值。
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4.发明授权公开(公告)号：US06801827B2
公开(公告)日：2004-10-05
申请号：US10268716
申请日：2002-10-09
IPC分类号： G06F1900
CPC分类号： H01L21/67253 , G03F7/70125 , G03F7/705 , G03F7/70525 , G03F7/706 , G03F7/70633
摘要： A system for manufacturing a semiconductor device which predicts a difference in registration error between a circuit pattern and an overlay mark from a pattern dimension, illumination conditions and the wave aberration of an exposure lens, feeds a correction value based on the predicted difference back to an exposure device and modifies an overlay inspection data control limit.
摘要翻译： 用于制造半导体器件的系统，其根据图案尺寸，照射条件和曝光透镜的波像差来预测电路图案和覆盖标记之间的配准误差的差异，将基于预测差异的校正值反馈给 曝光装置和修改覆盖检查数据控制限制。
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公开(公告)号：US20090002695A1
公开(公告)日：2009-01-01
申请号：US12141955
申请日：2008-06-19
CPC分类号： G01N21/8806 , G01N21/9501 , G01N2021/8822 , G01N2021/8861 , G02B21/0032 , G02B21/0072
摘要： The present invention provides an apparatus and a method for reviewing a defect with high throughput by detecting the defect to be reviewed with high sensitivity, comprising: an optical microscope; a correction means; and a scanning electron microscope which reviews the defect existed on the sample; wherein the optical microscope has: an optical height detection system which optically detects a vertical position of an upper surface of the sample placed on the stage; an illumination optical system which illuminates the defect with light; an image detection optical system which converges and detects reflected light or scattered light generated from the defect illuminated by the illumination optical system to obtain an image signal; and a focus adjusting means which adjusts a focus position of the optical microscope based on the vertical position of the upper surface of the sample, which is detected by the optical height detection system.
摘要翻译： 本发明提供一种通过以高灵敏度检测待检查的缺陷来检查具有高通量的缺陷的装置和方法，包括：光学显微镜; 修正手段; 和扫描电子显微镜检查样品上存在的缺陷; 其中所述光学显微镜具有：光学高度检测系统，其光学地检测放置在所述台上的样品的上表面的垂直位置; 用光照亮缺陷的照明光学系统; 会聚和检测由照明光学系统照射的缺陷产生的反射光或散射光以获得图像信号的图像检测光学系统; 以及焦点调节装置，其基于由光学高度检测系统检测到的样品的上表面的垂直位置来调节光学显微镜的焦点位置。
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6.发明授权Method and system for monitoring a semiconductor device manufacturing process 有权用于监测半导体器件制造工艺的方法和系统公开(公告)号：US06909930B2
公开(公告)日：2005-06-21
申请号：US10124412
申请日：2002-04-18
申请人： Chie Shishido , Yuji Takagi , Masahiro Watanabe , Yasuhiro Yoshitake , Shunichi Matsumoto , Takashi Iizumi , Osamu Komuro , Maki Tanaka , Hidetoshi Morokuma
发明人： Chie Shishido , Yuji Takagi , Masahiro Watanabe , Yasuhiro Yoshitake , Shunichi Matsumoto , Takashi Iizumi , Osamu Komuro , Maki Tanaka , Hidetoshi Morokuma
CPC分类号： H01L21/67276
摘要： To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus are stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus a check of the results on the screen can easily be performed.
摘要翻译： 为了实现用于在光刻工艺中在产品晶片级的曝光设备中检测条件变化（曝光漂移和焦点偏移）的方法，以这样的方式指定特征量的计算结果，例如电子束 将各种曝光和焦点下的图像，线轮廓，尺寸等存储为库，并将产品晶片的电子束图像与库中的这些数据进行比较，以便检测到 曝光和重点检查屏幕上的结果可以很容易地执行。
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公开(公告)号：US06697698B2
公开(公告)日：2004-02-24
申请号：US10198394
申请日：2002-07-17
IPC分类号： G06F1900
CPC分类号： H01L21/67253 , G03F7/70125 , G03F7/705 , G03F7/70525 , G03F7/706 , G03F7/70633
摘要： A system for manufacturing a semiconductor device which predicts a difference in registration error between a circuit pattern and an overlay mark from a pattern dimension, illumination conditions and the wave aberration of an exposure lens, feeds a correction value based on the predicted difference back to an exposure device and modifies an overlay inspection data control limit.
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公开(公告)号：US08045146B2
公开(公告)日：2011-10-25
申请号：US12141955
申请日：2008-06-19
CPC分类号： G01N21/8806 , G01N21/9501 , G01N2021/8822 , G01N2021/8861 , G02B21/0032 , G02B21/0072
摘要： The present invention provides an apparatus and a method for reviewing a defect with high throughput by detecting the defect to be reviewed with high sensitivity, comprising: an optical microscope; a correction means; and a scanning electron microscope which reviews the existing defect on the sample; wherein the optical microscope has: an optical height detection system which optically detects a vertical position of an upper surface of the sample placed on the stage; an illumination optical system which illuminates the defect with light; an image detection optical system which converges and detects reflected light or scattered light generated from the defect illuminated by the illumination optical system to obtain an image signal; and a focus adjusting means which adjusts a focus position of the optical microscope based on the vertical position of the upper surface of the sample, which is detected by the optical height detection system.
摘要翻译： 本发明提供一种通过以高灵敏度检测待检查的缺陷来检查具有高通量的缺陷的装置和方法，包括：光学显微镜; 修正手段; 和扫描电子显微镜，用于回顾样品上现有的缺陷; 其中所述光学显微镜具有：光学高度检测系统，其光学地检测放置在所述台上的样品的上表面的垂直位置; 用光照亮缺陷的照明光学系统; 会聚和检测由照明光学系统照射的缺陷产生的反射光或散射光以获得图像信号的图像检测光学系统; 以及焦点调节装置，其基于由光学高度检测系统检测到的样本的上表面的垂直位置来调整光学显微镜的对焦位置。
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公开(公告)号：US06720117B2
公开(公告)日：2004-04-13
申请号：US10390670
申请日：2003-03-19
IPC分类号： G03F900
CPC分类号： G03F9/7019 , G03F9/7011 , G03F9/7084
摘要： An exposure mask includes an optically transparent substrate, a device area constituted with a pattern formed on the substrate, and alignment marks formed on the substrate. Further measurement data for relative positional displacement between the device area and the alignment marks on the substrate is appended together with information for identifying the substrate to the substrate.
摘要翻译： 曝光掩模包括光学透明基板，由形成在基板上的图案构成的器件区域和形成在基板上的对准标记。 将用于将衬底识别到衬底的信息附加在衬底上的器件区域和对准标记之间的相对位置位移的另外的测量数据。
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公开(公告)号：US06686107B2
公开(公告)日：2004-02-03
申请号：US09943140
申请日：2001-08-31
IPC分类号： G03F900
CPC分类号： G03F9/7019 , G03F9/7011 , G03F9/7084
摘要： A relative positional error is caused between an alignment mark and a device area on a mask due to an error inherent to the mask drawing apparatus, which causes an alignment error in the device area even when alignment upon exposure has no problem. Then, according to this invention, a relative positional error between the alignment mark and the device area on the mask is measured in an off line manner, the result of measurement is set upon exposure as a correction value to an exposure device thereby correcting the mask drawing error to reduce alignment errors in the device area.
摘要翻译： 由于掩模绘图装置固有的错误，在掩模上的对准标记和器件区域之间产生相对位置误差，即使在曝光时的对准没有问题的情况下也会导致器件区域中的对准误差。 然后，根据本发明，以离线方式测量对准标记和掩模上的器件面积之间的相对位置误差，将曝光结果作为校正值设置在曝光装置上，从而校正掩模 绘图错误，以减少设备区域中的对齐错误。
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