发明申请
- 专利标题： SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME
- 专利标题（中）： 固态摄像元件及其制造方法及使用其的电子设备
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申请号： US12788503申请日： 2010-05-27
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公开(公告)号： US20110024857A1公开(公告)日： 2011-02-03
- 发明人: Yoshinori Toumiya , Kiyotaka Tabuchi , Yasuyuki Shiga , Iwao Sugiura , Naoyuki Miyashita , Masanori Iwasaki , Katsunori Kokubun , Tomohiro Yamazaki
- 申请人： Yoshinori Toumiya , Kiyotaka Tabuchi , Yasuyuki Shiga , Iwao Sugiura , Naoyuki Miyashita , Masanori Iwasaki , Katsunori Kokubun , Tomohiro Yamazaki
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-135236 20090604
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/18
摘要：
Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.
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