发明申请
- 专利标题： Interconnect Structure for Semiconductor Devices
- 专利标题（中）： 半导体器件的互连结构
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申请号： US12902877申请日： 2010-10-12
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公开(公告)号： US20110027991A1公开(公告)日： 2011-02-03
- 发明人: Hui-Lin Chang , Hung Chun Tsai , Yung-Cheng Lu , Syun-Ming Jang
- 申请人： Hui-Lin Chang , Hung Chun Tsai , Yung-Cheng Lu , Syun-Ming Jang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/443
- IPC分类号： H01L21/443
摘要：
A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer.
公开/授权文献
- US08053356B2 Interconnect structure for semiconductor devices 公开/授权日：2011-11-08
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