发明申请
US20110034038A1 Methods and devices for forming nanostructure monolayers and devices including such monolayers
有权
用于形成纳米结构单层的方法和装置以及包括这种单层的装置
- 专利标题： Methods and devices for forming nanostructure monolayers and devices including such monolayers
- 专利标题（中）： 用于形成纳米结构单层的方法和装置以及包括这种单层的装置
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申请号： US12803568申请日： 2010-06-29
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公开(公告)号： US20110034038A1公开(公告)日： 2011-02-10
- 发明人: Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
- 申请人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
- 申请人地址： US CA Palo Alto
- 专利权人： NANOSYS, Inc.
- 当前专利权人： NANOSYS, Inc.
- 当前专利权人地址： US CA Palo Alto
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105
摘要：
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
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