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1.发明授权Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权用于形成纳米结构单层的方法和装置以及包括这种单层的装置公开(公告)号：US08507390B2
公开(公告)日：2013-08-13
申请号：US12803568
申请日：2010-06-29
申请人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L21/3105
CPC分类号： H01L21/28008 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28229 , H01L21/28273 , H01L21/3105 , Y10S977/774 , Y10S977/782 , Y10S977/845 , Y10S977/855 , Y10S977/89 , Y10S977/891
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。
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2.发明申请Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权用于形成纳米结构单层的方法和装置以及包括这种单层的装置公开(公告)号：US20110034038A1
公开(公告)日：2011-02-10
申请号：US12803568
申请日：2010-06-29
申请人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L21/3105
CPC分类号： H01L21/28008 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/28229 , H01L21/28273 , H01L21/3105 , Y10S977/774 , Y10S977/782 , Y10S977/845 , Y10S977/855 , Y10S977/89 , Y10S977/891
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。
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3.发明申请Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权用于形成纳米结构单层的方法和装置以及包括这种单层的装置公开(公告)号：US20100155786A1
公开(公告)日：2010-06-24
申请号：US11881739
申请日：2007-07-27
申请人： David L. Heald , Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , Madhuri L. Nallabolu , J. Wallace Parce , Srikanth Ranganathan
发明人： David L. Heald , Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , Madhuri L. Nallabolu , J. Wallace Parce , Srikanth Ranganathan
IPC分类号： H01L29/772 , H01L21/302 , H01L21/31
CPC分类号： H01L29/66477 , B82Y10/00 , B82Y30/00 , G03F7/0754 , G03F7/165 , G03F7/168 , H01L21/28273 , H01L21/823437 , H01L21/823828 , H01L29/42332 , H01L29/78
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.
摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。 还提供了在高温处理过程中保护纳米结构不熔化的方法。
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4.发明申请Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权用于形成纳米结构单层的方法和装置以及包括这种单层的装置公开(公告)号：US20090065764A1
公开(公告)日：2009-03-12
申请号：US12291101
申请日：2008-11-05
申请人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。
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5.发明授权Methods and devices for forming nanostructure monolayers and devices including such monolayers 有权用于形成纳米结构单层的方法和装置以及包括这种单层的装置公开(公告)号：US08143703B2
公开(公告)日：2012-03-27
申请号：US12291101
申请日：2008-11-05
申请人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
IPC分类号： H01L29/06
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。
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6.发明授权公开(公告)号：US07501315B2
公开(公告)日：2009-03-10
申请号：US11148001
申请日：2005-06-07
申请人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
发明人： David L. Heald , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , J. Wallace Parce
CPC分类号： G03F7/0757 , B82Y10/00 , B82Y30/00 , G11C13/00 , H01L21/02137 , H01L21/02282 , H01L21/02304 , H01L21/28273 , H01L21/3124 , Y10S977/755 , Y10S977/845 , Y10S977/855 , Y10S977/936 , Y10S977/938
摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).
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