发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
-
申请号： US12667999申请日： 2009-03-27
-
公开(公告)号： US20110037101A1公开(公告)日： 2011-02-17
- 发明人: Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
- 申请人： Kazushi Nakazawa , Toshiyuki Takizawa , Tetsuzo Ueda , Daisuke Ueda
- 优先权： JP2008-148019 20080605
- 国际申请： PCT/JP2009/001417 WO 20090327
- 主分类号： H01L29/205
- IPC分类号： H01L29/205 ; H01L29/80 ; H01L29/737 ; H01L29/20
摘要：
A semiconductor device includes an undoped GaN layer (13), an undoped AlGaN layer (14), and a p-type GaN layer (15). In the p-type GaN layer (15), highly resistive regions (15a) are selectively formed. Resistance of the highly resistive regions (15a) can be increased by introducing a transition metal, for example, titanium.
信息查询
IPC分类:
