发明申请
- 专利标题： Semiconductor Device Using An Aluminum Interconnect To Form Through-Silicon Vias
- 专利标题（中）： 使用铝互连形成通硅通孔的半导体器件
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申请号： US12539105申请日： 2009-08-11
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公开(公告)号： US20110037143A1公开(公告)日： 2011-02-17
- 发明人: Kevin S. Petrarca , Matthew Angyal , Lawrence A. Clevenger , Carl Radens , Brian C. Sapp
- 申请人： Kevin S. Petrarca , Matthew Angyal , Lawrence A. Clevenger , Carl Radens , Brian C. Sapp
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L23/48 ; H01L21/02 ; H01L21/768
摘要：
An aluminum lateral interconnect of a Back End of the Line (BEOL) is used to define the x and y dimensions of a through-silicon via in a semiconductor chip formed in a silicon substrate. The TSV includes one or more aluminum annulus formed on a surface of the substrate, and a deep trench in the substrate having a diameter that is determined by the diameter of the aluminum annulus. The annulus can also be provided with a conductive strap upon which a capacitor can be formed. The strap can also be used to provide a connection of the TV to other BEOL interconnects.
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