发明申请
US20110042724A1 Trenched mosfets with part of the device formed on a (110) crystal plane
审中-公开
在110平面上形成有部分器件的沟槽式mosfet
- 专利标题： Trenched mosfets with part of the device formed on a (110) crystal plane
- 专利标题（中）： 在110平面上形成有部分器件的沟槽式mosfet
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申请号： US11634031申请日： 2009-04-20
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公开(公告)号： US20110042724A1公开(公告)日： 2011-02-24
- 发明人: Anup Bhalla , Sik K. Lui , Sung-Shan Tai
- 申请人： Anup Bhalla , Sik K. Lui , Sung-Shan Tai
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
This invention discloses an improved MOSFET devices manufactured with a trenched gate by forming the sidewalls of the trench on a (110) crystal orientation of a semiconductor substrate. The trench is covering with a dielectric oxide layer along the sidewalls and the bottom surface or the termination of the trench formed along different crystal orientations of the semiconductor substrate. Special manufacturing processes such as oxide annealing process, special mask or SOG processes are implemented to overcome the limitations of the non-uniform dielectric layer growth.
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