发明申请
- 专利标题： IMPACT IONIZATION FIELD-EFFECT TRANSISTOR
- 专利标题（中）： 影响离子场效应晶体管
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申请号： US12870922申请日： 2010-08-30
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公开(公告)号： US20110049476A1公开(公告)日： 2011-03-03
- 发明人: Mikael T. Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E. Riel , Walter Heinrich Riess , Heinz Schmid
- 申请人： Mikael T. Bjoerk , Oliver Hayden , Joachim Knoch , Emanuel Loertscher , Heike E. Riel , Walter Heinrich Riess , Heinz Schmid
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 优先权： EP09169056.0 20090831
- 主分类号： H01L29/775
- IPC分类号： H01L29/775
摘要：
An Impact Ionization Field-Effect Transistor (I-MOS) device in which device degradation caused by hot carrier injection into a gate oxide is prevented. The device includes source, drain, and gate contacts, and a channel between the source and the drain. The channel has a dimension normal to the direction of a charge carrier transport in the channel such that the energy separation of the first two sub-bands equals or exceeds the effective energy band gap of the channel material.
公开/授权文献
- US08754401B2 Impact ionization field-effect transistor 公开/授权日：2014-06-17
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