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    Hybrid semiconductor structure
    7.
    发明授权
    Hybrid semiconductor structure 失效
    混合半导体结构

    公开(公告)号：US07947580B2

    公开(公告)日：2011-05-24

    申请号：US12331675

    申请日：2008-12-10

    申请人： Mikael T. Bjoerk ,  Oliver Hayden ,  Heike E. Riel ,  Walter Heinrich Riess ,  Heinz Schmid

    发明人： Mikael T. Bjoerk ,  Oliver Hayden ,  Heike E. Riel ,  Walter Heinrich Riess ,  Heinz Schmid

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L21/02433 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/7833 ,  Y10S977/762

    摘要： A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole.

    摘要翻译： 一种制造半导体结构的方法，其包括由此形成的具有不同结晶取向和半导体结构的区域。 所公开的方法允许制造具有不同半导体材料的区域的半导体结构。 该方法使用蒸气 - 液体 - 固体（VLS）生长过程进行模板化晶体生长。 蚀刻具有第一晶体取向方向的硅半导体衬底以在其表面上具有孔阵列。 在孔的内表面上形成分离层用于适当的应用。 将生长催化剂置于孔的底部，开始VLS晶体生长过程以形成纳米线。 所得的纳米线晶体具有第二不同的晶体取向，其通过孔的几何形状进行模板化。

    HYBRID SEMICONDUCTOR STRUCTURE
    8.
    发明申请
    HYBRID SEMICONDUCTOR STRUCTURE 失效
    混合半导体结构

    公开(公告)号：US20090146133A1

    公开(公告)日：2009-06-11

    申请号：US12331675

    申请日：2008-12-10

    申请人： Mikael T. Bjoerk ,  Oliver Hayden ,  Heike E. Riel ,  Walter Heinrich Riess ,  Heinz Schmid

    发明人： Mikael T. Bjoerk ,  Oliver Hayden ,  Heike E. Riel ,  Walter Heinrich Riess ,  Heinz Schmid

    IPC分类号： H01L29/66 ,  H01L21/205 ,  H01L21/66

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L21/02433 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/7833 ,  Y10S977/762

    摘要： A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole.

    摘要翻译： 一种制造半导体结构的方法，其包括由此形成的具有不同结晶取向和半导体结构的区域。 所公开的方法允许制造具有不同半导体材料的区域的半导体结构。 该方法使用蒸气 - 液体 - 固体（VLS）生长过程进行模板化晶体生长。 蚀刻具有第一晶体取向方向的硅半导体衬底以在其表面上具有孔阵列。 在孔的内表面上形成分离层用于适当的应用。 将生长催化剂置于孔的底部，开始VLS晶体生长过程以形成纳米线。 所得的纳米线晶体具有第二不同的晶体取向，其通过孔的几何形状进行模板化。

    Metal-oxide-semiconductor device including a multiple-layer energy filter
    9.
    发明授权
    Metal-oxide-semiconductor device including a multiple-layer energy filter 失效
    包括多层能量过滤器的金属氧化物半导体器件

    公开(公告)号：US08129763B2

    公开(公告)日：2012-03-06

    申请号：US12027712

    申请日：2008-02-07

    申请人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

    发明人： Mikael T. Bjoerk ,  Siegfried F. Karg ,  Joachim Knoch ,  Heike E. Riel ,  Walter H. Riess ,  Heinz Schmid

    IPC分类号： H01L29/06

    CPC分类号： H01L29/0847 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827

    摘要： A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.

    摘要翻译： MOS器件包括相对于彼此间隔开的第一和第二源极/漏极。 在第一和第二源极/漏极之间的器件中形成通道。 在第一和第二源极/漏极之间并且靠近沟道的器件中形成栅极，栅极与第一和第二源极/漏极和沟道电隔离。 栅极被配置为根据施加到栅极的电位来控制沟道的导通。 MOS器件还包括形成在第一源极/漏极和沟道之间的能量滤波器。 能量滤波器包括形成微带的超晶格结构。 能量滤波器用于控制从第一源极/漏极进入沟道的载流子的注入。 与第一源极/漏极组合的能量滤波器被配置为产生有效的零开尔文第一源极/漏极。