发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12723981申请日： 2010-03-15
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公开(公告)号： US20110049608A1公开(公告)日： 2011-03-03
- 发明人: Masaru KIDOH , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人： Masaru KIDOH , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-203075 20090902
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
A memory string comprises: a first semiconductor layer including a columnar portion extending in a stacking direction on a substrate; a first charge storage layer surrounding the columnar portion; and a plurality of first conductive layers stacked on the substrate so as to surround the first charge storage layer. A select transistor comprises: a second semiconductor layer in contact with an upper surface of the columnar portion and extending in the stacking direction; a second charge storage layer surrounding the second semiconductor layer; and a second conductive layer deposited above the first conductive layer to surround the second charge storage layer. The second charge storage layer is formed from a layer downward of the second conductive layer to an upper end vicinity of the second conductive layer, and is not formed in a layer upward of the upper end vicinity.
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