发明申请
- 专利标题： Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
- 专利标题（中）： 用于器件的超薄外延结构的镓和氮的快速生长方法和结构
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申请号： US12859153申请日： 2010-08-18
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公开(公告)号： US20110056429A1公开(公告)日： 2011-03-10
- 发明人: James Raring , Arpan Chakraborty , Christiane Poblenz
- 申请人： James Raring , Arpan Chakraborty , Christiane Poblenz
- 申请人地址： US CA Goleta
- 专利权人： Soraa, Inc.
- 当前专利权人： Soraa, Inc.
- 当前专利权人地址： US CA Goleta
- 主分类号： C30B25/20
- IPC分类号： C30B25/20 ; C30B25/02 ; C30B25/08
摘要：
A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns.
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