发明申请
- 专利标题： POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY
- 专利标题（中）： 多晶硅设计替代浇口技术
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申请号： US12554604申请日： 2009-09-04
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公开(公告)号： US20110057267A1公开(公告)日： 2011-03-10
- 发明人: Harry Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- 申请人： Harry Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/86 ; H01L21/02 ; H01L21/82
摘要：
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.
公开/授权文献
- US08890260B2 Polysilicon design for replacement gate technology 公开/授权日：2014-11-18
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