发明申请
- 专利标题： NONVOLATILE MEMORY AND FABRICATION METHOD THEREOF
- 专利标题（中）： 非易失性存储器及其制造方法
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申请号： US12943487申请日： 2010-11-10
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公开(公告)号： US20110059592A1公开(公告)日： 2011-03-10
- 发明人: Tseung-Yuen TSENG , Chun-Chieh Lin , Chao-Cheng Lin
- 申请人： Tseung-Yuen TSENG , Chun-Chieh Lin , Chao-Cheng Lin
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Non-volatile memories formed on a substrate and fabrication methods are disclosed. A bottom electrode comprising a metal layer is disposed on the substrate. A buffer layer comprising a LaNiO3 film is disposed over the metal layer. A resistor layer comprising a SrZrO3 film is disposed on the buffer layer. A top electrode is disposed on the resistor layer.
公开/授权文献
- US08324068B2 Nonvolatile memory and fabrication method thereof 公开/授权日：2012-12-04
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