发明申请
- 专利标题： SEMICONDUCTOR DEVICE, POWER CIRCUIT, AND MANUFACTURING MKETHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件，电源电路和半导体器件制造商
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申请号： US12888064申请日： 2010-09-22
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公开(公告)号： US20110068852A1公开(公告)日： 2011-03-24
- 发明人: Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- 申请人： Shunpei Yamazaki , Kei Takahashi , Yoshiaki Ito
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2009-218816 20090924
- 主分类号： G05F1/10
- IPC分类号： G05F1/10 ; H01L29/26 ; H01L21/20
摘要：
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
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