发明申请
- 专利标题： Pattern forming method and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的图案形成方法和制造方法
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申请号： US12926134申请日： 2010-10-27
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公开(公告)号： US20110070680A1公开(公告)日： 2011-03-24
- 发明人: Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
- 申请人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-008290 20040115
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232
摘要：
A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
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