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29 条记录 (耗时 0.026 秒)

    Film forming method, and substrate-processing apparatus
    1.
    发明申请
    Film forming method, and substrate-processing apparatus 失效
    成膜方法和基板处理装置

    公开(公告)号：US20050208777A1

    公开(公告)日：2005-09-22

    申请号：US11034926

    申请日：2005-01-14

    申请人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    发明人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    IPC分类号： G03F7/16 ,  B05C9/12 ,  B05C13/00 ,  B05D3/00 ,  B05D3/02 ,  G02F1/136 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  G03F7/38 ,  H01L21/00 ,  H01L21/027 ,  H01L21/20 ,  H01L21/312 ,  H01L21/469

    CPC分类号： H01L21/02282 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0274 ,  H01L21/312

    摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere, a predetermined time, and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.

    摘要翻译： 一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置 在基本收敛之后的预定条件下包括水分的气氛中，预定条件使得涂膜暴露于大气中的时间，预定时间和每单位体积的水含量的乘积 使涂膜表面附近的气氛大于或等于预定值，并且在待机之后在基板上形成固体薄膜，通过执行消除形成薄膜 涂膜中的溶剂和用于对涂膜中的涂层型薄膜形成物质产生不可逆反应的热处理。

    Film forming method, and substrate-processing apparatus
    6.
    发明授权
    Film forming method, and substrate-processing apparatus 失效
    成膜方法和基板处理装置

    公开(公告)号：US07709383B2

    公开(公告)日：2010-05-04

    申请号：US11034926

    申请日：2005-01-14

    申请人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    发明人： Hirokazu Kato ,  Tomoyuki Takeishi ,  Shinichi Ito

    IPC分类号： H01L21/20 ,  H01L21/44

    CPC分类号： H01L21/02282 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  H01L21/0274 ,  H01L21/312

    摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.

    摘要翻译： 一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置 在大致收敛之后的预定条件下的包括水分的气氛中，预定条件使得涂膜暴露于大气的时间与在大气附近的气氛中的每单位体积的含水量 使涂膜的表面大于或等于预定值，并在待机之后在基板上形成固体薄膜，通过在涂层中除去溶剂而形成薄膜 膜和热处理，以在涂膜中产生与涂层型薄膜形成物质不可逆的反应。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS
    9.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS 审中-公开
    用于形成电阻图案的半导体器件制造方法和基板处理装置

    公开(公告)号：US20110229826A1

    公开(公告)日：2011-09-22

    申请号：US13118779

    申请日：2011-05-31

    申请人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。