发明申请
US20110079837A1 CAPACITOR, METHOD OF INCREASING A CAPACITANCE AREA OF SAME, AND SYSTEM CONTAINING SAME
有权
电容器,增加其电容区域的方法和包含该电容器的系统
- 专利标题: CAPACITOR, METHOD OF INCREASING A CAPACITANCE AREA OF SAME, AND SYSTEM CONTAINING SAME
- 专利标题(中): 电容器,增加其电容区域的方法和包含该电容器的系统
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申请号: US12967238申请日: 2010-12-14
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公开(公告)号: US20110079837A1公开(公告)日: 2011-04-07
- 发明人: Brian S. Doyle , Robert S. Chau , Suman Datta , Vivek De , Ali Keshavarzi , Dinesh Somasekhar
- 申请人: Brian S. Doyle , Robert S. Chau , Suman Datta , Vivek De , Ali Keshavarzi , Dinesh Somasekhar
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L21/8242
摘要:
A capacitor includes a substrate (110, 210), a first electrically insulating layer (120, 220) over the substrate, and a fin (130, 231) including a semiconducting material (135) over the first electrically insulating layer. A first electrically conducting layer (140, 810) is located over the first electrically insulating layer and adjacent to the fin. A second electrically insulating layer (150, 910) is located adjacent to the first electrically conducting layer, and a second electrically conducting layer (160, 1010) is located adjacent to the second electrically insulating layer. The first and second electrically conducting layers together with the second electrically insulating layer form a metal-insulator-metal stack that greatly increases the capacitance area of the capacitor. In one embodiment the capacitor is formed using what may be referred to as a removable metal gate (RMG) approach.