发明申请
US20110081503A1 Method of depositing stable and adhesive interface between fluorine-based low-k material and metal barrier layer
审中-公开
在氟基低k材料和金属阻挡层之间沉积稳定和粘合界面的方法
- 专利标题： Method of depositing stable and adhesive interface between fluorine-based low-k material and metal barrier layer
- 专利标题（中）： 在氟基低k材料和金属阻挡层之间沉积稳定和粘合界面的方法
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申请号： US12574117申请日： 2009-10-06
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公开(公告)号： US20110081503A1公开(公告)日： 2011-04-07
- 发明人: Jianping ZHAO , Lee CHEN
- 申请人： Jianping ZHAO , Lee CHEN
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： C23C16/513
- IPC分类号： C23C16/513 ; B05D5/12 ; C23C14/34 ; C23C14/46
摘要：
A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer.
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