- 专利标题: POST-PLANARIZATION DENSIFICATION
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申请号: US12787791申请日: 2010-05-26
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公开(公告)号: US20110081782A1公开(公告)日: 2011-04-07
- 发明人: Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
- 申请人: Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/3105
- IPC分类号: H01L21/3105
摘要:
Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
公开/授权文献
- US08329587B2 Post-planarization densification 公开/授权日:2012-12-11