发明申请
US20110092073A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
审中-公开
等离子体处理装置,等离子体处理方法和制造电子装置的方法
- 专利标题: PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
- 专利标题(中): 等离子体处理装置,等离子体处理方法和制造电子装置的方法
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申请号: US12996878申请日: 2009-06-03
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公开(公告)号: US20110092073A1公开(公告)日: 2011-04-21
- 发明人: Hideyuki Nitta , Takashi Hosono , Takefumi Minato , Yoshihisa Kase , Makoto Muto
- 申请人: Hideyuki Nitta , Takashi Hosono , Takefumi Minato , Yoshihisa Kase , Makoto Muto
- 申请人地址: JP Yokohama-shi, Kanagawa-ken
- 专利权人: SHIBAURA MECHATRONICS CORPORATION
- 当前专利权人: SHIBAURA MECHATRONICS CORPORATION
- 当前专利权人地址: JP Yokohama-shi, Kanagawa-ken
- 优先权: JP2008-155101 20080613
- 国际申请: PCT/JP2009/060124 WO 20090603
- 主分类号: H01L21/465
- IPC分类号: H01L21/465 ; C23C16/455 ; C23C16/458 ; C23C16/511 ; C23C16/46 ; C23F1/08 ; C23F1/00
摘要:
A plasma processing apparatus includes: a processing container capable of maintaining an atmosphere having a pressure lower than atmospheric pressure; an evacuation unit reducing a pressure of an interior of the processing container; a gas introduction unit introducing a process gas to the interior of the processing container; a microwave introduction unit introducing a microwave to the interior of the processing container; and a lifter pin ascendably and descendably inserted through a placement platform provided in the interior of the processing container, an end surface of the lifter pin supporting an object to be processed, the object to be processed being supported by the lifter pin at a first position proximal to an upper surface of the placement platform when the microwave is introduced and plasma is ignited, the object to be processed being supported by the lifter pin at a second position after the plasma ignition, the second position being more distal to the placement platform than the first position.
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