发明申请
- 专利标题： SILICON CRYSTALLIZATION SYSTEM AND SILICON CRYSTALLIZATION METHOD USING LASER
- 专利标题（中）： 硅晶体结构和使用激光的硅结晶方法
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申请号： US12911937申请日： 2010-10-26
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公开(公告)号： US20110097906A1公开(公告)日： 2011-04-28
- 发明人: Oh-Seob KWON , Sang-Jo Lee , Hong-Ro Lee , Je-Kil Ryu
- 申请人： Oh-Seob KWON , Sang-Jo Lee , Hong-Ro Lee , Je-Kil Ryu
- 优先权： KR10-2009-0101813 20091026; KR10-2010-0058150 20100618
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; G21G5/00
摘要：
A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.
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