Abstract:
A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.
Abstract:
An organic light emitting display apparatus and a method of inspecting the same, the organic light emitting display apparatus including a plurality of sub-pixels; a plurality of conductive line portions connected to the sub-pixels, the plurality of conductive line portions including at least two conductive lines connected in parallel to one another; and inspection thin film transistors (TFTs) disposed adjacent to one end and both ends of at least one conductive line of the conductive lines connected in parallel to one another.
Abstract:
A display apparatus includes a plurality of first wirings extending in a first direction and a plurality of second wirings extending in a second direction crossing the first direction. Differing first identification patterns are present on the plurality of corresponding first wirings to identify the plurality of first wirings, and differing second identification patterns are present on the plurality of corresponding second wirings to identify the plurality of second wirings.
Abstract:
A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer. The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.