发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13005589申请日： 2011-01-13
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公开(公告)号： US20110101417A1公开(公告)日： 2011-05-05
- 发明人: Tsuneo OGURA , Masakazu Yamaguchi , Tomoki Inoue , Hideaki Ninomiya , Koichi Sugiyama
- 申请人： Tsuneo OGURA , Masakazu Yamaguchi , Tomoki Inoue , Hideaki Ninomiya , Koichi Sugiyama
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-159468 20040528
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.
公开/授权文献
- US08319314B2 Semiconductor device 公开/授权日：2012-11-27
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