发明申请
- 专利标题： INTERCONNECTION STRUCTURES FOR SEMICONDCUTOR DEVICES
- 专利标题（中）： 用于半导体器件的互连结构
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申请号： US12987440申请日： 2011-01-10
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公开(公告)号： US20110101439A1公开(公告)日： 2011-05-05
- 发明人: Jin-Taek Park , Jong-Ho Park , Sung-Hoi Hur , Hyun-Suk Kim
- 申请人： Jin-Taek Park , Jong-Ho Park , Sung-Hoi Hur , Hyun-Suk Kim
- 优先权： KR2004-0048119 20040625
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An interconnection structure for a semiconductor device includes an inter-level insulation layer disposed on a semiconductor substrate. First contact constructions penetrate the inter-level insulation layer. Second contact constructions penetrate the inter-level insulation layer. Metal interconnections connect the first contact constructions to the second contact constructions on the inter-level insulation layer. The first contact constructions include first and second plugs stacked in sequence and the second contact constructions include the second plug.
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