发明申请
- 专利标题： PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 专利标题（中）： 等离子体加工设备和等离子体处理方法
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申请号： US12913441申请日： 2010-10-27
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公开(公告)号： US20110104902A1公开(公告)日： 2011-05-05
- 发明人: Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
- 申请人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-245988 20091027; JP2009-245991 20091027; JP2010-215119 20100927
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; C23C16/505 ; H01L21/30 ; C23C14/34
摘要：
A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
公开/授权文献
- US09313872B2 Plasma processing apparatus and plasma processing method 公开/授权日：2016-04-12
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