发明申请
- 专利标题: PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 专利标题(中): 等离子体加工设备和等离子体处理方法
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申请号: US12994940申请日: 2009-05-28
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公开(公告)号: US20110111601A1公开(公告)日: 2011-05-12
- 发明人: Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
- 申请人: Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
- 优先权: JP2008-142338 20080530; JP2008-142341 20080530; JP2008-207694 20080812; JP2009-058375 20090311
- 国际申请: PCT/JP2009/002353 WO 20090528
- 主分类号: H01L21/3065
- IPC分类号: H01L21/3065 ; C23F1/08
摘要:
In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.
公开/授权文献
- US08673166B2 Plasma processing apparatus and plasma processing method 公开/授权日:2014-03-18
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