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公开(公告)号：US20110111601A1
公开(公告)日：2011-05-12
申请号：US12994940
申请日：2009-05-28
申请人： Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
发明人： Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/6831 , H01J37/32431 , H01L21/67069 , H01L21/6833 , H01L21/68742 , Y10S414/137 , Y10T279/23
摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.
摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，通过衬底保持装置对衬底进行静电吸引时，上推销被升高并且检测到推力，当止动销的升高停止时， 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。
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公开(公告)号：US08591754B2
公开(公告)日：2013-11-26
申请号：US13527807
申请日：2012-06-20
IPC分类号： B44C1/22
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.
摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 上部包括支撑托盘的下表面的托盘支撑表面，其中每个基板放置部分的基板放置部分以及用于容纳基板支撑部分的凹部。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置部之间供给导热气体。 在承载基板期间，基板的下表面的外周缘由基板收纳孔支撑。 在基板的加工过程中，基板支撑部分容纳在凹部中。
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公开(公告)号：US20120006489A1
公开(公告)日：2012-01-12
申请号：US13257636
申请日：2010-03-23
申请人： Shogo Okita , Hiromi Asakura
发明人： Shogo Okita , Hiromi Asakura
IPC分类号： H01L21/3065 , C23C16/50 , C23C16/503
CPC分类号： H01L21/68742 , H01L21/67757 , H01L21/68735 , H01L21/6875 , H01L21/68771
摘要： Substrates are contained in substrate containing holes which penetrate a tray in the thickness direction. A dielectric plate in a chamber is provided with a tray supporting surface which supports the lower surface of the tray and substrate placing sections which protrude upward, and has an electrostatic chuck electrode therein. The substrate supporting section which supports the substrate contained in the substrate containing holes is provided with a plurality of protruding sections formed at intervals in the circumferential direction of the substrate containing holes. The substrates are supported in point-contact mode by means of the protruding sections.
摘要翻译： 基板包含在沿厚度方向穿过托盘的孔中的基板。 腔室中的电介质板设置有支撑托盘的下表面的托盘支撑表面和向上突出的基片放置部分，并且其中具有静电卡盘电极。 支撑包含在基板容纳孔中的基板的基板支撑部设置有沿基板容纳孔的圆周方向间隔地形成的多个突出部。 基板通过突出部分以点接触模式被支撑。
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公开(公告)号：US20090218045A1
公开(公告)日：2009-09-03
申请号：US12092381
申请日：2006-11-01
申请人： Mitsuru Hiroshima , Hiromi Asakura , Syouzou Watanabe , Mitsuhiro Okune , Hiroyuki Suzuki , Ryuzou Houchin
发明人： Mitsuru Hiroshima , Hiromi Asakura , Syouzou Watanabe , Mitsuhiro Okune , Hiroyuki Suzuki , Ryuzou Houchin
CPC分类号： H01J37/32082
摘要： The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.
摘要翻译： 等离子体处理装置具有放置在与基板2相对的室3的上开口处的波束形间隔件7.梁状间隔件7具有环形外周部7a，其下表面7d由室3支撑， 位于由平面内的外周部7a包围的区域的中心的中央部7b，以及从中央部7b向外周部7a径向延伸的多个梁部7c。 整个电介质板8均匀地被梁状间隔件7支撑。当室3在内部压力降低时，电介质板8的厚度可以减小，同时确保用于支撑大气压力的机械强度。
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公开(公告)号：USD329303S
公开(公告)日：1992-09-08
申请号：US654675
申请日：1991-02-14
申请人： Hiromi Asakura
设计人： Hiromi Asakura
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公开(公告)号：US08906249B2
公开(公告)日：2014-12-09
申请号：US12532268
申请日：2008-03-19
申请人： Mitsuru Hiroshima , Hiromi Asakura
发明人： Mitsuru Hiroshima , Hiromi Asakura
IPC分类号： C03C15/00 , H01L21/461 , H01J37/32 , C23C16/455 , H05H1/46 , C23C16/507
CPC分类号： H05H1/46 , C23C16/45574 , C23C16/4558 , C23C16/507 , H01J37/321 , H01J37/3244
摘要： A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.
摘要翻译： 等离子体处理装置包括一个放置在与衬底2相对的腔3的上部开口处以支撑电介质板8的梁形间隔件7.电介质板8由梁形间隔件7支撑。在 梁状间隔件7设置有多个处理气体导入口31,36，它们具有凹陷角度＆amp; t; d并且向下并且朝向基板2，以及多个稀有气体导入口41，其具有 俯仰角度; e朝向电介质板8.可以实现诸如蚀刻速率的处理速率的改善以及有效抑制电介质板8的磨损。
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公开(公告)号：US20120256363A1
公开(公告)日：2012-10-11
申请号：US13527807
申请日：2012-06-20
IPC分类号： B23Q3/00
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.
摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 上部包括支撑托盘的下表面的托盘支撑表面，其中每个基板放置部分的基板放置部分以及用于容纳基板支撑部分的凹部。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置部之间供给导热气体。 在承载基板期间，基板的下表面的外周缘由基板收纳孔支撑。 在基板的加工过程中，基板支撑部分容纳在凹部中。
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公开(公告)号：US20100051584A1
公开(公告)日：2010-03-04
申请号：US12578844
申请日：2009-10-14
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。
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公开(公告)号：US20090255901A1
公开(公告)日：2009-10-15
申请号：US12090214
申请日：2006-10-11
IPC分类号： H01L21/306 , C23C16/453 , H05H1/24 , C23F1/00
CPC分类号： F27D5/0068 , H01J37/321 , H01J37/32706 , H01L21/3065 , H01L21/67069
摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.
摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。
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公开(公告)号：US08673166B2
公开(公告)日：2014-03-18
申请号：US12994940
申请日：2009-05-28
申请人： Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
发明人： Shogo Okita , Hiromi Asakura , Syouzou Watanabe , Toshihiro Wada , Mitsuhiro Okune , Mitsuru Hiroshima
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01J37/32431 , H01L21/67069 , H01L21/6833 , H01L21/68742 , Y10S414/137 , Y10T279/23
摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.
摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，由于基板保持装置对基板的静电吸引停止，所以上推销被升高，并且检测到上推力，因此停止上推销的升高 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。
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