公开(公告)号：US08673166B2

公开(公告)日：2014-03-18

申请号：US12994940

申请日：2009-05-28

申请人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

发明人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  Y10S414/137 ,  Y10T279/23

摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.

摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，由于基板保持装置对基板的静电吸引停止，所以上推销被升高，并且检测到上推力，因此停止上推销的升高 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。

公开(公告)号：US20120094500A1

公开(公告)日：2012-04-19

申请号：US13336446

申请日：2011-12-23

申请人： Mitsuhiro Okune ,  Hiroyuki Suzuki

发明人： Mitsuhiro Okune ,  Hiroyuki Suzuki

IPC分类号： H01L21/3065

CPC分类号： H01L21/32137 ,  H01J37/32091 ,  H01L21/3065

摘要： An object of the present invention is suppressing notches in dry etching of a processing object where an etched layer made of a silicon material is formed on an etching stop layer. A substrate has an etched layer made of a silicon material on an etching stop layer. SF6/C4F8 gas, as an etching gas, is supplied to generate plasma, and a portion of the etched layer exposed through a resist mask is etched. A sidewall protection layer made of polymer is formed on a sidewall of a trench or a hole.

摘要翻译： 本发明的目的是抑制在蚀刻停止层上形成由硅材料制成的蚀刻层的处理对象的干蚀刻中的凹口。 衬底在蚀刻停止层上具有由硅材料制成的蚀刻层。 作为蚀刻气体的SF6 / C4F8气体被供给以产生等离子体，蚀刻通过抗蚀剂掩模暴露的蚀刻层的一部分。 在沟槽或孔的侧壁上形成由聚合物制成的侧壁保护层。

公开(公告)号：US20080093338A1

公开(公告)日：2008-04-24

申请号：US11792238

申请日：2005-12-06

申请人： Mitsuhiro Okune ,  Hiroyuki Suzuki

发明人： Mitsuhiro Okune ,  Hiroyuki Suzuki

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/32137 ,  H01J37/32091 ,  H01L21/3065

摘要： An object of the present invention is suppressing notches in dry etching of a processing object where an etched layer made of a silicon material is formed on an etching stop layer. A substrate 12 has an etched layer 22 made of a silicon material on an etching stop layer 21. SF6/C4F8 gas, as an etching gas, is supplied to generate plasma, and a portion of the etched layer exposed through a resist mask 23 is etched. A sidewall protection layer 24 made of polymer is formed on a sidewall of a trench or hole.

摘要翻译： 本发明的目的是抑制在蚀刻停止层上形成由硅材料制成的蚀刻层的处理对象的干蚀刻中的凹口。 衬底12在蚀刻停止层21上具有由硅材料制成的蚀刻层22。 供应作为蚀刻气体的SF 6 / C 4 F 8气体以产生等离子体，并且蚀刻层的一部分暴露于 蚀刻抗蚀剂掩模23。 在沟槽或孔的侧壁上形成由聚合物制成的侧壁保护层24。

公开(公告)号：US20090218045A1

公开(公告)日：2009-09-03

申请号：US12092381

申请日：2006-11-01

申请人： Mitsuru Hiroshima ,  Hiromi Asakura ,  Syouzou Watanabe ,  Mitsuhiro Okune ,  Hiroyuki Suzuki ,  Ryuzou Houchin

发明人： Mitsuru Hiroshima ,  Hiromi Asakura ,  Syouzou Watanabe ,  Mitsuhiro Okune ,  Hiroyuki Suzuki ,  Ryuzou Houchin

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01J37/32082

摘要： The plasma processing apparatus has a beam-shaped spacer 7 placed at the upper opening of the chamber 3 opposed to the substrate 2. The beam-shaped spacer 7 has an annular outer peripheral portion 7a whose lower surface 7d is supported by the chamber 3, a central portion 7b located at the center of a region surrounded by the outer peripheral portion 7a in plane view, and a plurality of beam portions 7c extending radially from the central portion 7b to the outer peripheral portion 7a. An entire of a dielectric plate 8 is uniformly supported by the beam-shaped spacer 7. The dielectric plate 8 can be reduces in thickness while securing a mechanical strength for supporting the atmospheric pressure when the chamber 3 is internally reduced in pressure.

摘要翻译： 等离子体处理装置具有放置在与基板2相对的室3的上开口处的波束形间隔件7.梁状间隔件7具有环形外周部7a，其下表面7d由室3支撑， 位于由平面内的外周部7a包围的区域的中心的中央部7b，以及从中央部7b向外周部7a径向延伸的多个梁部7c。 整个电介质板8均匀地被梁状间隔件7支撑。当室3在内部压力降低时，电介质板8的厚度可以减小，同时确保用于支撑大气压力的机械强度。

公开(公告)号：US20080138993A1

公开(公告)日：2008-06-12

申请号：US11794306

申请日：2005-12-06

申请人： Mitsuru Hiroshima ,  Sumio Miyake ,  Mitsuhiro Okune ,  Shozoh Watanabe ,  Hiroyuki Suzuki

发明人： Mitsuru Hiroshima ,  Sumio Miyake ,  Mitsuhiro Okune ,  Shozoh Watanabe ,  Hiroyuki Suzuki

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dry etching apparatus comprises: a vacuum chamber where a processing target is disposed on a bottom wall side of an internal space; a coil for generating plasma that is disposed above and outside the vacuum chamber and has conductors disposed so that a gap is formed in a plane view; a top wall that closes the top of the internal space and has a transparent section at a position corresponding to the gap between conductors of the coil 36 in the plane view; and a camera that is disposed above the coil and can capture at least a part of the processing target in a field of view through the gap and the transparent section. The status of the processing target during plasma processing can be observed in real-time.

摘要翻译： 干蚀刻装置包括：真空室，其中处理对象设置在内部空间的底壁侧; 用于产生等离子体的线圈，其设置在真空室的上方和外部，并具有布置成在平面图中形成间隙的导体; 顶壁，其封闭内部空间的顶部，并且在与平面图中的线圈36的导体之间的间隙对应的位置处具有透明部分; 以及设置在线圈上方并且可以通过间隙和透明部分在视场中捕获处理目标的至少一部分的照相机。 可以实时观察等离子体处理过程中处理对象的状态。

公开(公告)号：US20110111601A1

公开(公告)日：2011-05-12

申请号：US12994940

申请日：2009-05-28

申请人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

发明人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Toshihiro Wada ,  Mitsuhiro Okune ,  Mitsuru Hiroshima

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  Y10S414/137 ,  Y10T279/23

摘要： In a plasma processing apparatus, thrust-up pins are elevated and a thrust-up force is detected when electrostatic attraction for a substrate by a substrate holding device is ceased after completion of plasma processing, the elevation of the thrust-up pins is ceased upon detection of a detection threshold, and a stepped elevating operation in which the elevation and stoppage of the thrust-up pins are repeated a plurality of times are thereafter commenced on condition that the detected thrust-up force falls to or below the detection threshold and that release of the substrate from a placement surface has not been completed. In the stepped elevating operation, operation timing of the thrust-up device is controlled so that the completion of the release of the substrate from the placement surface is detected when the thrust-up pins are stopped after being elevated and so that the stepped elevating operation is continued on condition that the release has not been completed.

摘要翻译： 在等离子体处理装置中，在等离子体处理完成之后，通过衬底保持装置对衬底进行静电吸引时，上推销被升高并且检测到推力，当止动销的升高停止时， 检测阈值的检测，并且其中多次加重上推销的升降动作的阶梯式升降动作，在检测到的上推力降至或低于检测阈值的条件下开始，并且 基板从放置表面的释放尚未完成。 在阶梯式升降操作中，控制上推装置的动作正时，使得当升降销在升高后停止时检测到基板从放置面的释放的完成，并且使阶梯式升降操作 在发布尚未完成的情况下继续进行。

公开(公告)号：US20070131652A1

公开(公告)日：2007-06-14

申请号：US10581256

申请日：2004-11-26

申请人： Mitsuhiro Okune ,  Mitsuru Hiroshima ,  Hiroyuki Suzuki ,  Sumio Miyake ,  Shouzou Watanabe

发明人： Mitsuhiro Okune ,  Mitsuru Hiroshima ,  Hiroyuki Suzuki ,  Sumio Miyake ,  Shouzou Watanabe

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01J37/321 ,  H01J2237/3347 ,  H01L21/3065

摘要： An object of the present invention is to provide a plasma etching method by which both of a requirement for a trench shape and a requirement for a aspect ratio can be satisfied, and a trench having a side wall of a smooth shape can be formed. According to the present invention, a silicon substrate is placed on a lower electrode (120), etching gas is supplied through a gas introducing port (140) and exhausted from an exhaust port (150), high frequency powers (130a, 130b) supply high-frequency electricity to an upper electrode (110) and a lower electrode (120), respectively, in order to energize the etching gas into plasma state, using an ICP method, and then activated species are generated to make etching of the silicon substrate be progressed. As the etching gas, mixed gas, which includes mainly SF6 gas added with O2 gas and He gas, is used.

摘要翻译： 本发明的目的是提供一种等离子体蚀刻方法，其中可以满足沟槽形状的要求和宽高比的要求，并且可以形成具有平滑形状的侧壁的沟槽。 根据本发明，将硅衬底放置在下电极（120）上，通过气体导入口（140）供给蚀刻气体并从排气口（150）排出高频电力（130a，130b ）分别向上部电极（110）和下部电极（120）供给高频电力，以使用ICP方法将蚀刻气体激发成等离子体状态，然后产生活化物质，以使 硅衬底进行。 作为蚀刻气体，使用主要包含添加有O 2气体的SF 6气体和He气体的混合气体。