发明申请
- 专利标题: SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR
- 专利标题(中): 溅射靶及其制造方法和晶体管
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申请号: US12945421申请日: 2010-11-12
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公开(公告)号: US20110114944A1公开(公告)日: 2011-05-19
- 发明人: Shunpei Yamazaki , Toru Takayama , Keiji Sato
- 申请人: Shunpei Yamazaki , Toru Takayama , Keiji Sato
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2009-260224 20091113
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; C23C14/34 ; B24B1/00 ; B32B38/00 ; B32B38/16
摘要:
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.