The self-powered detection device comprises at least a non-volatile memory cell (24) and a sensor (16) which is activated by a physical or chemical action or phenomenon, this sensor forming an energy harvester that transforms energy from said physical or chemical action or phenomenon into an electrical stimulus pulse, the memory cell being arranged for storing, by using the electrical power of said electrical stimulus pulse, at least a bit of information relative to the detection by the sensor of at least a first physical or chemical action or phenomenon applied to it with at least a given strength or intensity. The non-volatile memory cell is formed by a FET transistor (T1) having a control gate, a first diffusion (DRN) defining a first input and a second diffusion (SRC) defining a second input. This FET transistor is set to its written logical state from its initial logical state when, in a detection mode of this self-powered detection device, it receives on a set terminal, among said control gate and said first and second inputs, a voltage stimulus signal resulting from the first physical or chemical action or phenomenon. In a first embodiment of the invention, the set terminal of the FET transistor is its control gate and the first input of this FET transistor is connected to the ground of the sensor in said detection mode. In a further embodiment of the invention, the set terminal of the FET transistor is its first input and the control gate of this FET transistor is connected to the ground (GND) of the sensor in the detection mode.