发明申请
US20110120374A1 System and Method for Mitigating Oxide Growth in a Gate Dielectric
审中-公开
降低栅极电介质中氧化物生长的系统和方法
- 专利标题： System and Method for Mitigating Oxide Growth in a Gate Dielectric
- 专利标题（中）： 降低栅极电介质中氧化物生长的系统和方法
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申请号： US13017828申请日： 2011-01-31
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公开(公告)号： US20110120374A1公开(公告)日： 2011-05-26
- 发明人: Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
- 申请人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.
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