发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12902656申请日： 2010-10-12
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公开(公告)号： US20110121374A1公开(公告)日： 2011-05-26
- 发明人: Kazuo OGAWA
- 申请人： Kazuo OGAWA
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-266271 20091124
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/772 ; H01L21/336 ; H01L21/8242
摘要：
A vertical transistor comprises a semiconductor region, a pillar region formed on the semiconductor region, a gate insulating film formed so as to cover a side surface of the pillar region, a gate electrode formed on the gate insulating film, a first impurity diffusion region formed in an upper portion of the pillar region, and a second impurity diffusion region formed in the semiconductor region so as to surround the pillar region. The first impurity diffusion region is formed so as to be spaced from the side surface of the pillar region.
公开/授权文献
- US08536642B2 Semiconductor device and method for manufacturing the same 公开/授权日：2013-09-17
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