发明申请
- 专利标题: FILM FORMATION METHOD AND APPARATUS
- 专利标题(中): 胶片形成方法和装置
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申请号: US12954778申请日: 2010-11-26
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公开(公告)号: US20110129619A1公开(公告)日: 2011-06-02
- 发明人: Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
- 申请人: Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-269831 20091127; JP2010-228615 20101008
- 主分类号: C23C16/34
- IPC分类号: C23C16/34 ; H05H1/24 ; C23C16/52
摘要:
A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
公开/授权文献
- US08216648B2 Film formation method and apparatus 公开/授权日:2012-07-10