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43 条记录 (耗时 0.015 秒)

    Photovoltaic device and manufacturing method thereof
    2.
    发明授权
    Photovoltaic device and manufacturing method thereof 有权
    光伏器件及其制造方法

    公开(公告)号：US08012787B2

    公开(公告)日：2011-09-06

    申请号：US12989098

    申请日：2008-04-30

    申请人： Masato Yonezawa ,  Kimikazu Hazumi ,  Akihiro Takami ,  Hiroaki Morikawa ,  Kunihiko Nishimura

    发明人： Masato Yonezawa ,  Kimikazu Hazumi ,  Akihiro Takami ,  Hiroaki Morikawa ,  Kunihiko Nishimura

    IPC分类号： H01L21/00

    CPC分类号： H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/068 ,  Y02E10/547

    摘要： The manufacturing method includes: forming a P-type silicon substrate and a high-concentration N-type diffusion layer, in which an N-type impurity is diffused in a first concentration, on an entire surface at a light-incident surface side; forming an etching resistance film on the high-concentration N-type diffusion layer and forming fine pores at a predetermined position within a recess forming regions on the etching resistance film; forming recesses by etching the silicon substrate around a forming position of the fine pores, so as not to leave the high-concentration N-type diffusion layer within the recess forming region; forming the low-concentration N-type diffusion layer, in which an N-type impurity is diffused in a second concentration that is lower than the first concentration, on a surface on which the recesses are formed; and forming a grid electrode in an electrode forming region at a light-incident surface side of the silicon substrate.

    摘要翻译： 该制造方法包括：在光入射表面侧的整个表面上形成P型硅衬底和其中N型杂质以第一浓度扩散的高浓度N型扩散层; 在高浓度N型扩散层上形成耐腐蚀性膜，在蚀刻电阻膜的凹部形成区域内的规定位置形成细孔; 通过在所述细孔的形成位置周围蚀刻所述硅基板而形成凹部，以便不将所述高浓度N型扩散层留在所述凹部形成区域内; 在其上形成凹部的表面上形成其中N型杂质以低于第一浓度的第二浓度扩散的低浓度N型扩散层; 以及在所述硅衬底的光入射表面侧的电极形成区域中形成栅电极。

    Conveyor device and film formation apparatus for a flexible substrate
    4.
    发明授权
    Conveyor device and film formation apparatus for a flexible substrate 有权
    用于柔性基底的输送装置和成膜装置

    公开(公告)号：US06827787B2

    公开(公告)日：2004-12-07

    申请号：US09777280

    申请日：2001-02-05

    申请人： Masato Yonezawa ,  Naoto Kusumoto ,  Hisato Shinohara

    发明人： Masato Yonezawa ,  Naoto Kusumoto ,  Hisato Shinohara

    IPC分类号： C23C1600

    CPC分类号： C23C16/545

    摘要： With a conventional cylindrical can method, a region used as a film formation ground electrode is a portion of the cylindrical can, and an apparatus becomes larger in size in proportion to the surface area of the electrode. A conveyor device and a film formation apparatus having the conveyor device are provided, which have a unit for continuously conveying a flexible substrate from one end to the other end, and which are characterized in that a plurality of cylindrical rollers are provided between the one end and the other end along an arc with a radius R, the cylindrical rollers being arranged such that their center axes run parallel to each other, and that a mechanism for conveying the flexible substrate while the substrate is in contact with each of the plurality of cylindrical rollers is provided.

    摘要翻译： 采用常规的圆筒罐法，用作成膜接地电极的区域是圆筒形罐的一部分，并且设备的尺寸与电极的表面积成比例变大。 本发明提供一种具有输送装置的输送装置和成膜装置，其具有从一端向另一端连续输送柔性基板的单元，其特征在于，在一端 并且另一端沿着具有半径R的圆弧，所述圆柱滚子被布置成使得它们的中心轴彼此平行地延伸;以及用于在所述基板与所述多个圆柱体中的每一个接触的同时传送所述柔性基板的机构 提供滚筒。

    Method of manufacturing a semiconductor device
    5.
    发明授权
    Method of manufacturing a semiconductor device 有权

    公开(公告)号：US06825492B2

    公开(公告)日：2004-11-30

    申请号：US10775128

    申请日：2004-02-11

    申请人： Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki ,  Jun Koyama ,  Yasuko Watanabe

    发明人： Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki ,  Jun Koyama ,  Yasuko Watanabe

    IPC分类号： H01H2904

    CPC分类号： G06Q30/02 ,  G06Q30/0256 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/3244

    摘要： The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element.

    Vertical film formation apparatus and method for using same
    6.
    发明授权
    Vertical film formation apparatus and method for using same 有权
    垂直成膜装置及其使用方法

    公开(公告)号：US08563096B2

    公开(公告)日：2013-10-22

    申请号：US12954767

    申请日：2010-11-26

    申请人： Masanobu Matsunaga ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

    发明人： Masanobu Matsunaga ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

    IPC分类号： C23C16/02 ,  H05H1/24

    CPC分类号： C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546

    摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.

    摘要翻译： 使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理 具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。 涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。 成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

    VERTICAL FILM FORMATION APPARATUS AND METHOD FOR USING SAME
    8.
    发明申请
    VERTICAL FILM FORMATION APPARATUS AND METHOD FOR USING SAME 有权
    垂直膜形成装置及其使用方法

    公开(公告)号：US20110129618A1

    公开(公告)日：2011-06-02

    申请号：US12954767

    申请日：2010-11-26

    申请人： Masanobu MATSUNAGA ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

    发明人： Masanobu MATSUNAGA ,  Pao-Hwa Chou ,  Masato Yonezawa ,  Masayuki Hasegawa ,  Kazuhide Hasebe

    IPC分类号： H05H1/24 ,  C23C16/02

    CPC分类号： C23C16/345 ,  C23C16/4404 ,  C23C16/45542 ,  C23C16/45546

    摘要： A method for using a vertical film formation apparatus includes performing a coating process inside the process container without product target objects present therein to cover an inner surface of the process container with a coating film, and then performing a film formation process inside the process container accommodating the holder with the product target objects placed thereon to form a predetermined film on the product target objects. The coating process alternately supplies the first and second process gases into the process container without turning either of the first and second process gases into plasma. The film formation process alternately supplies the first and second process gases into the process container while turning at least one of the first and second process gases into plasma.

    摘要翻译： 使用垂直成膜装置的方法包括在其中没有产品目标物体的处理容器内部进行涂覆处理以用涂膜覆盖处理容器的内表面，然后在容纳处理容器内部进行成膜处理 具有放置在其上的产品目标物体的保持器，以在产品目标物体上形成预定的膜。 涂覆过程交替地将第一和第二工艺气体提供到工艺容器中，而不将第一和第二工艺气体中的任何一种转化为等离子体。 成膜过程将第一和第二处理气体交替地供给到处理容器中，同时将第一和第二处理气体中的至少一个转化为等离子体。

    CVD method for forming silicon nitride film
    9.
    发明授权
    CVD method for forming silicon nitride film 有权
    用于形成氮化硅膜的CVD方法

    公开(公告)号：US07462376B2

    公开(公告)日：2008-12-09

    申请号：US10558217

    申请日：2004-05-21

    申请人： Hitoshi Kato ,  Kohei Fukushima ,  Masato Yonezawa ,  Junya Hiraka

    发明人： Hitoshi Kato ,  Kohei Fukushima ,  Masato Yonezawa ,  Junya Hiraka

    IPC分类号： C23C16/34

    CPC分类号： H01L21/02271 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/3185

    摘要： A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.

    摘要翻译： 用于形成氮化硅膜的CVD方法包括排出容纳目标衬底（W）的处理室（8），并将硅烷族气体（HCD）和氨气（NH 3）供应到处理室中，从而形成硅 通过CVD在靶基板上形成氮化物膜。 所述在目标衬底上形成氮化硅膜交替地包括进入硅烷族气体（HCD）进入处理室（8）的第一时段和停止供应硅烷族气体的第二时段。

    Method for manufacturing semiconductor device
    10.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07365004B2

    公开(公告)日：2008-04-29

    申请号：US11033380

    申请日：2005-01-12

    申请人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

    发明人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

    IPC分类号： H01L21/4763

    CPC分类号： H01L31/03921 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50

    摘要： The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The constitution of the invention is characterized by comprising: a first step forming the lower electrode and the semiconductor layer on the insulating substrate by laminating; a second step forming a protective film on surface of the semiconductor; a third step forming an opening portion at the semiconductor layer, or the semiconductor layer and the lower electrode by laser beam process after the second step; and a fourth step removing the protective film.

    摘要翻译： 本发明旨在防止太阳能电池的特性的下降，并且通过激光束工艺在产生太阳能电池的方法中，在激光束工艺产生的粉末状态的颗粒产生的产率产生。 本发明的结构的特征在于包括：通过层压在绝缘基板上形成下电极和半导体层的第一步骤; 在半导体的表面上形成保护膜的第二步骤; 在第二步骤之后通过激光束处理在半导体层形成开口部分的第三步骤或半导体层和下部电极; 以及除去保护膜的第四步骤。