发明申请
- 专利标题: ENHANCED PASSIVATION PROCESS TO PROTECT SILICON PRIOR TO HIGH DOSE IMPLANT STRIP
- 专利标题(中): 增强钝化过程以保护高剂量植入物条带
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申请号: US12963503申请日: 2010-12-08
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公开(公告)号: US20110139175A1公开(公告)日: 2011-06-16
- 发明人: David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
- 申请人: David Cheung , Haoquan Fang , Jack Kuo , Ilia Kalinovski , Ted Li , Andrew Yao
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; B08B13/00 ; B08B7/00
摘要:
Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.
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