发明申请
US20110143032A1 Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants
有权
Porogen，Porogenated前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜
- 专利标题： Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films With Low Dielectric Constants
- 专利标题（中）： Porogen，Porogenated前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜
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申请号： US13031387申请日： 2011-02-21
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公开(公告)号： US20110143032A1公开(公告)日： 2011-06-16
- 发明人: Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
- 申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
- 申请人地址： US PA Allentown
- 专利权人： Air Products and Chemicals, Inc.
- 当前专利权人： Air Products and Chemicals, Inc.
- 当前专利权人地址： US PA Allentown
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C09D7/12
摘要：
A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.