发明申请
US20110143533A1 POISON-FREE AND LOW ULK DAMAGE INTEGRATION SCHEME FOR DAMASCENE INTERCONNECTS
有权
无连接和低ULK损伤集成方案用于大型互连
- 专利标题： POISON-FREE AND LOW ULK DAMAGE INTEGRATION SCHEME FOR DAMASCENE INTERCONNECTS
- 专利标题（中）： 无连接和低ULK损伤集成方案用于大型互连
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申请号： US13023315申请日： 2011-02-08
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公开(公告)号： US20110143533A1公开(公告)日： 2011-06-16
- 发明人: Ping Jiang , William W. Dostalik , Yong Seok Choi
- 申请人： Ping Jiang , William W. Dostalik , Yong Seok Choi
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of forming a dual damascene structure is disclosed. A lower dielectric hardmask layer and an upper dielectric hardmask layer are deposited on an ultra low-k film. A first via is formed in the upper hardmask layer. Next, a first trench is formed using a tri-layer resist scheme. Finally, a full via and a full trench are formed simultaneously. An optional etch-stop layer can be used in the ultra low-k layer to control trench depth.
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