发明申请
- 专利标题： THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US12972859申请日： 2010-12-20
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公开(公告)号： US20110147744A1公开(公告)日： 2011-06-23
- 发明人: Yasuhiro Jinbo , Hideomi Suzawa , Hiromichi Godo , Shinya Sasagawa
- 申请人： Yasuhiro Jinbo , Hideomi Suzawa , Hiromichi Godo , Shinya Sasagawa
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2009-289840 20091221
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
An object is to increase the on-state current of a thin film transistor. A solution is to provide a projection in a back-channel portion of the thin film transistor. The projection is provided so as to be off a tangent in the back-channel portion between a source or a drain and a channel formation region. With the projection, a portion where electric charge is trapped and a path of the on-state current can be apart from each other, so that the on-state current can be increased. The shape of a side surface of the back-channel portion may be curved, or may be represented as straight lines in a cross section. Further, a method for forming such a shape by performing one etching step is provided.
公开/授权文献
- US09202929B2 Thin film transistor and method for manufacturing the same 公开/授权日：2015-12-01
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